NTE NTE199 Datasheet

NTE199

Silicon NPN Transistor

Low Noise, High Gain Amplifier

Description:

The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu­ration voltage, tight beta control, and excellent low noise characteristics.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V

Collector–Base Voltage, V
Emitter–Base Voltage, V
Steady State Collector Current (Note 1), I
Total Power Dissipation (T

CEO

CBO

EBO

= +25°C), P

A

C

T

Derate Above +25°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +55°C), P

A

T

Derate Above +25°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 1/16” from case, 10sec max), T

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

260mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . .

Note 1. Determined from power limitations due to saturation voltages at this current

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Collector Cutoff Current I

Collector Cutoff Current I
Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

CBO

CES
EBO

VCB = 50V – – 30 nA
VCB = 50V, TA = +100°C – – 10 µA
VCB = 50V – – 30 nA
VEB = 5V – – 50 nA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics (Cont’d)

Forward Current Transfer Ratio h

FE

VCE = 5V, IC = 2mA 400 – 800
VCE = 5V, IC = 100µA, Note 2 – 300 –

Breakdown Voltage

V

(BR)CEOIC

= 10mA, Note 3 50 – – V

Collector–to–Emitter

Breakdown Voltage

V

(BR)CBOIC

= 10µA 70 – – V

Collector–to–Base

Breakdown Voltage

V

(BR)EBOIE

= 10µA 5 – – V

Emitter–to–Base
Collector Saturation Voltage V
Base Saturation Voltage V
Base Emitter ON Voltage V

CE(sat)IC
BE(sat)IC

BE(on)

= 10mA, IB = 1mA, Note 3 – – 0.125 V
= 10mA, IB = 1mA, Note 3 – – 0.78 V

VCE = 10V, IC = 2mA 0.5 – 0.9 V

Dynamic Characteristics

Forward Current Transfer Ratio h
Output Capacitance,

fe

C

cb

VCE = 5V, IC = 2mA, f = 1kHz 400 – 1200
VCB = 10V, IE = 0, f = 1kHz – – 4 pF

Common Base
Noise Figure NF IC = 100µA, VCE = 5V,

= 5kΩ, f = 1kHz

R

g

– – 3 dB

Note 2. Typically, a minimum of 95% of the distribution is above this value.
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

.135 (3.45) Min

.210

(5.33)

Max

.500

(12.7)

Min

E C B

.100 (2.54)

.050 (1.27)

Seating Plane

.021 (.445) Dia Max

.165
(4.2)
Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max