NTE NTE198 Datasheet
NTE198
Silicon NPN Transistor
High Voltage Power Transistor
Description:
The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for
use as a line operated audio output amplifier, switchmode power supply driver , and other switchmode
applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
CB
Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
A
D
Derate above +25°C 0.016W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
D
Derate above +25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unclamped Inducting Load Energy, E 20mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CES
EBO
= 30mA, IB = 0, Note 1 400 – – V
VCE = 300V, IB = 0 – – 1 mA
VCE = 500V, VBE = 0 – – 1 mA
VBE = 5V, IC = 0 – – 1 mA
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
VCE = 10V, IC = 0.3A 30 – 150
VCE = 10V, IC = 1A 10 – –
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
CE(sat)IC
BE(on)
= 1A, IB = 0.2A – – 1.0 V
VCE = 10V, IC = 1A – – 1.5 V
Dynamic Characteristics
Current Gain–Bandwidth Product f
Small–Signal Current Gain h
T
fe
VCE = 10V, IC = 0.2A, f = 2MHz 10 – – MHz
VCE = 10V, IC = 0.2A, f = 1kHz 25 – –
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
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