NTE NTE195A Datasheet

NTE195A

Silicon NPN Transistor

RF Power Amp/Driver, CB

Description:

The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use
in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up–modulation in AM circuits.

Features:

D Specified 12.5V, 28MHz Characteristic:

Power Output = 3.5W
Power Gain = 10dB
Efficiency = 70% Typical

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V

CBO

EBO

Collector Current–Continuous, I
Total Device Dissipation (T

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CER

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= +25°C), PD 8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Derate above 25°C 28.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

Collector Cutoff Current I

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Capacitance C

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

(TA = +25°C, unless otherwise specified)

(BR)CESIC

(BR)EB

O

CBO

IE = 1mA, IC = 0 4 – – V

VCB = 15V, IE = 0 – – 0.01 mA

VCE = 2V, IC = 400mA 30 – – –

FE

VCB = 12.5V, IE = 0, f = 1MHz – 35 70 pF

ob

= 200mA, V

= 0 70 – – V

BE

Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Functional Test

Common Emitter Amplifier Power Gain G
Collector Efficiency η P

PE

P

= 3.5W, VCC = 12.5V, f = 27MHz 10 – – dB

OUT

= 3.5W, VCC = 12.5V, f = 27MHz,

OUT

62.5 70.0 – %

Note 1
Percent Up–Modulation – f = 27MHz, Note 2 – 85 – %
Parallel Equivalent Input Resistance R
Parallel Equivalent Input Capacitance C
Parallel Equivalent Output Capaciatnce C

Note 1. η = RF P

OUT

(V

 100

CC

) (IC)

in
in

out

P

= 3.5W, VCC = 12.5V, f = 27MHz – 21 –

OUT

P

= 3.5W, VCC = 12.5V, f = 27MHz – 900 – pF

OUT

P

= 3.5W, VCC = 12.5V, f = 27MHz – 200 – pF

OUT

Ω

Note 2. Percentage Up–Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with

V

= 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after

CC

doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther­mal considerations) and raising the V

to 25Vdc (to simulate the modulating voltage). Per-

CC

centage Up–Modulation is then determined by the relation:

Percentage Up–Modulation = (PEP) 1/2–1  100

P

C

Emitter

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260

(6.6)

Max

.500

(12.7)

Min

.018 (0.45)

Base
Collector/Case

45°

.031 (.793)