NTE NTE194 Datasheet

NTE194
Silicon NPN Transistor
Audio Power Amplifier

Description:

The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CBO

EBO

C

= +25°C), PD 350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

Derate above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), PD 1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Derate above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient (Note 1), R

Note 1 R

is measured with the device soldered into a typical printed circuit board.

thJA

J

thJC

thJA

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collctor–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

= 1mA, IB = 0, Note 2 180 – – V
= 100µA, IE = 0 180 – – V

= 10µA, IC = 0 6 – – V
VCB = 120V, IE = 0 – – 50 nA
VCB = 120V, IE = 0, TA = +100°C – – 50 nA

160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

357°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Cutoff Current I

EBO

VEB = 4V, IC = 0 – – 50 nA

Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain h

FE

VCE = 5V, IC = 1mA 80 – –
VCE = 5V, IC = 10mA 80 – 250
VCE = 5V, IC = 50mA 30 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 10mA, IB = 1mA – – 0.15 V
IC = 50mA, IB = 5mA – – 0.20 V

Base–Emitter Saturation Voltage V

BE(sat)IC

= 10mA, IB = 1mA – – 1.0 V
IC = 50mA, IB = 5mA – – 1.0 V

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
Small–Signal Current Gain h

T

obo

ibo

fe

VCE = 10V, IC = 10mA, f = 100MHz 100 – 300 MHz
VCB = 10V, IE = 0, f = 1MHz – – 6 pF
VBE = 0.5V, IC = 0, f = 1MHz – – 20 pF
VCE = 10V, IC = 1mA, f = 1kHz 50 – 200

Noise Figure NF VCE = 5V, IC = 250µA, RS = 1kΩ,

f = 10Hz to 15.7kHz

Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.

.135 (3.45) Min

– – 8.0 dB

.210

(5.33)

Max

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

Seating Plane

.021 (.445) Dia Max

E B C

.050 (1.27)

.165
(4.2)
Max

.105 (2.67) Max