NTE NTE193A, NTE192, NTE192A, NTE193 Datasheet

NTE192 (NPN) & NTE193 (PNP)

NTE192A (NPN) & NTE193A (PNP)

Silicon Complementary Transistors

Audio Power Output

Description:

NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are e specially suited for high level l inear amplifiers or m edium speed switching c ircuits in
industrial control applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V

EBO

Continuous Collector Current (Note 1), I
Total Power Dissipation (T

(TA = +25°C unless otherwise specified)

CEO

CBO

C

= +25°C, Note 1), P

C

T

Derate Above 25°C 7.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

A

T

Derate Above 25°C 4.47mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), T

J

stg

L

Note 1. Determined from power limitations due to saturation voltage at this current.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

DC Characteristics

Collector Cutoff Current I

(TA = +25°C unless otherwise specified)

CBO

VCB = 50V – – 0.1 µA
VCB = 50V, TA = +100°C – – 15 µA

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

560mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . .

Emitter Cutoff Current I
Collector Saturation Voltage V
Base Saturation Voltage V
DC Current Gain h

CE(sat)IB
BE(sat)IB

EBO

FE

VEB = 5V – – 0.1 µA

= 3mA, IC = 50mA – – 0.30 V
= 3mA, IC = 50mA – – 0.85 V

VCE = 4.5V, IC = 2mA 180 – 540

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small–Signal Characteristics

Small–Signal Current Gain h

Input Impedance h
Output Admittance h
Voltage Feedback Ratio h

.350 (8.89) .187 (4.76)

.325

(8.27)

fe

ie

oe

re

VC = 4.5V, Frequency of
Measurement =1000cps

VCE = 10V, IC = 1mA, f = 1kc 150 – 300
VCE = 10V, IC = 1mA, f = 1kc 4200 – 8300 Ω
VCE = 10V, IC = 1mA, f = 1kc 10 – 20 µmhos
VCE = 10V, IC = 1mA, f = 1kc 0.2 – 0.4 x 10

180 – –

–3

.156

(3.95)

.500

(12.7)

Min

.263

(6.7)

Max

.125 (3.17) Dia

.017 (0.45) Dia

.100 (2.54)
.050 (1.27)

3

.127 (3.25)

2
1

Pin Number 1 2 3
NTE192/193 C B E
NTE192A/193A B C E