NTE NTE190 Datasheet

NTE190

Silicon NPN Transistor

High Voltage Amplifier

Description:

The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applica­tions, high voltage linear amplifiers, and high voltage transistor regulators.

Features:

D High Collector–Emitter Breakdown Voltage: V
D Low Collector–Emitter Saturation Voltatge: V
D High Power Dissipation: P

= 10W @ TC = +25°C

D

(BR)CEO

CE(sat)

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Total Device Dissipation (T

CEO

CB

EB

= +25°C), P

A

D

Derate Above 25°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 1/16” from case for 10sec), T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R

thJA

thJC

= 180V (Min) @ IC = 1mA

= 0.5V (Max) @ IC = 200mA

L

180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . .

125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(TC = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

VCB = 150V, IE = 0 – – 0.1 mA

= 1mA, IB = 0 180 – – V
= 100µA, IE = 0 180 – – V
= 100µA, IC = 0 5 – – V

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain h
Base–Emitter ON Voltage V
Collector–Emitter Saturation Voltage V

CE(sat)IC

FE

BE(on)IC

IC = 10mA, VCE = 10V 40 – –

= 200mA, VCE = 1V – – 1.0 V
= 200mA, IB = 20mA – – 0.5 V

Dynamic Characteristics

Current Gain–Bandwidth Product f

T

IC = 50mA, VCE = 20V,

f = 20MHz
Output Capacitance C
Input Capacitance C

ob

VCB = 10V, IE = 0, f = 100kHz – – 12 pF

VBE = 0.5V, IC = 0, f = 100kHz – – 110 pF

ib

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

.380 (9.65) Max

.160

(4.06)

35 – – MHz

.050 (1.27)

.100 (2.54)

.218

(5.55)

.475

(12.0)

Min

.100 (2.54)

Collector Connected to Tab

EBC

.280 (7.25) Max

.128 (3.28) Dia

.995

(25.3)

.200 (5.08)