NTE NTE189, NTE188 Datasheet
NTE188 (NPN) & NTE189 (PNP)
Silicon Complementary Transistors
High Voltage Amplifier & Driver
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type
package designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector–Emitter Breakdown Voltage: V
(BR)CEO
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voiltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (TA = +25°C), P
CEO
CB
EB
C
D
Derate Above 25°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
D
Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
Thermal Resistance, Junction–to–Ambient (Note 1), R
Thermal Resistance, Junction–to–Case, R
thJC
= 80V @ IC = 1mA
thJA
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. R
is measured with the device soldered into a typical printed circuit board.
thJA
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current
NTE188
NTE189 VCB = 60V, IE = 0 – – 100 nA
(BR)CEOIC
(BR)EBOIE
I
CBO
= 1mA, IB = 0, Note 2 80 – – V
= 100µA, IC = 0 4 – – V
VCB = 80V, IE = 0 – – 100 nA
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 3)
DC Current Gain
NTE188
h
FE
IC = 50mA, VCE = 1V 60 110 –
IC = 250mA, VCE = 1V 30 65 –
IC = 50mA, VCE = 1V – 33 –
NTE189 IC = 50mA, VCE = 1V 80 160 –
IC = 50mA, VCE = 1V 50 130 –
IC = 50mA, VCE = 1V – 8 –
Collector–Emitter Saturation Voltage
NTE188
V
CE(sat)
IC = 250mA, IB = 10mA – 0.18 0.4 V
IC = 250mA, IB = 25mA – 0.1 – V
NTE189 IC = 250mA, IB = 10mA – 0.22 0.5 V
IC = 250mA, IB = 25mA – 0.15 – V
Base–Emitter ON Voltage
NTE188
V
BE(on)
IC = 250mA, VCE = 5V – 0.76 1.2 V
NTE189 – 0.78 1.2 V
Small–Signal Characteristics
Current Gain–Bandwidth Product
NTE188
NTE189
f
T
IC = 250mA, VCE = 5V, f = 100MHz,
Note 2
50 150 – MHz
50 100 – MHz
Output Capacitance
NTE188
C
ob
VCB = 10V, IE = 0, f = 100MHz
– 6 12 pF
NTE189 – 10 15 pF
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.65) Max
.050 (1.27)
.160
(4.06)
.100 (2.54)
.218
(5.55)
.475
(12.0)
Min
EBC
.280 (7.25) Max
.128 (3.28) Dia
.995
(25.3)
.100 (2.54)
Collector Connected to Tab
.200 (5.08)
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