NTE NTE186, NTE187 Datasheet

NTE186 (NPN) & NTE187 (PNP)

Silicon Complementary Transistors

General Purpose Output & Driver for Audio Amplifier

Description:

The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case
designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater
than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/converters, and
many other general purpose applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CEO
CES

Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P

T

TC = +25°C 12.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 2.1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 1/16” from case for 10sec max), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

thJC

thJA

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . . . . . . . . .

10°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

DC Current Gain h

Collector Saturation Voltage V
Base Saturation Voltage V

CE(sat)IC
BE(sat)IC

Collector Cutoff Current I
Emitter Cutoff Current I
Collector Capacitance C
Current Gain–Bandwidth Product f
Delay Time t
Rise Time t
Storage Time t
Fall Time t

FE

CES
EBO

cbo

T
d

r

s

f

VCE = 1V, IC = 200mA 100 – 220
VCE = 1V, IC = 2A 20 – –

= 1A, IB = 50mA – – 0.5 V

= 1A, IB = 100mA – – 1.3 V
VCE = 70V, TJ = +25°C – – 10 µA
VEB = 5V, TJ = +25°C – – 100 µA
VCB = 10V, f = 1MHz – – 100 pF
VCE = 4V, IC = 20mA – 50 – MHz
IC = 1A, IB1 = IB2 = 100mA – 100 – ns

– 100 – ns
– 500 – ns

75 – – ns

C

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.400

(10.16)

Min

BCE

.100 (2.54) .100 (2.54)

.132 (3.35) Dia

.325

(9.52)

.180 (4.57).380 (9.56)

.070 (1.78) x 45°

Chamf

.050 (1.27)