NTE1840 & NTE1841
Integrated Circuit
Hybrid Switching Voltage Regulator
Features:
D Triple Diffused Transistor Chips Incorporated
D Compact Plastic Package with Industry Standard Reliability
D Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, V
Input Current, I
IN
Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TC = +100°C), P
Maximum Power Transistor Junction Temperature, T
Operating Temperature Range (T
Storage Temperature Range, T
IN
stg
C
D
), T
J
opr
550V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–20° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Detecting Voltage (Fixed Output)
NTE1840
NTE1841 42.5 43.0 43.5 V
Load Regulation Reg
Output Voltage Temperature
Coefficient
Saturation Voltage V
DC Current Gain h
Collector Cutoff Current I
Power Transistor Thermal
Resistance
Switching Time t
Note 1. Recommended Case Temperature: T
(TA = +25°C unles otherwise specified)
VIN = 120V, IO = 900mA 114.5 116.0 117.5 V
O
V
O
Iin = 7mA 41.3 41.8 42.3 V
LOADVIN
CE(sat)IC
V
BE(sat)IC
FE
CEX
R
thJC
s
t
f
= 120V, IO = 500mA to 900mA Initial Value ±1 V
TC = –20° to +100°C, Iin = 7mA – ±2 – mV/°C
= 2A, IB = 400mA – – 1.0 V
= 2A, IB = 400mA – – 1.5 V
IC = 1A, VCE = 4V 10 – 40
VCE = 550V, VBE = –1.5V – – 1.0 mA
Between Junction and Stem
Upper Surface
IC = 2A, IB1 = 300mA, IB2 = 300mA,
RL = 50Ω
= +100°C.
opr
– 1.8 – °C/W
– – 12 µs
– – 7 µs