NTE NTE185, NTE184 Datasheet
NTE184 (NPN) & NTE185 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Power Dissipation (T
CEO
CB
EB
= +25°C), P
C
D
Derate Above 25°C 320mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEO
I
CEX
I
CBO
EBO
= 0.1A, IB = 0, Note 1 80 – – V
VCE = 80V, IB = 0 – – 1.0 mA
VCE = 80V, V
VCE = 80V, V
VCB = 80V, IE = 0 – – 0.1 mA
VBE = 5V, IC = 0 – – 1.0 mA
= 1.5V – – 0.1 mA
EB(off)
= 1.5V, TC = +150°C – – 2.0 mA
EB(off)
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
CE(sat)IC
BE(on)IC
FE
T
IC = 1.5A, VCE = 2V 20 – 80
IC = 4A, VCE = 2V 7 – –
= 1.5A, IB = 0.15A – – 0.6 V
IC = 4A, IB = 1A – – 1.4 V
= 1.5A, VCE = 2V – – 1.2 V
IC = 1A, VCE = 10V, f = 1MHz 2.0 – – MHz
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (h
) matched to within
FE
10% of each other.
Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and
NTE185 (PNP).
.330 (8.38)
Max
.175
(4.45)
.450
Max
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.118 (3.0)
Dia
.030 (.762) Dia
ECB
.090 (2.28)
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