NTE NTE183, NTE182 Datasheet

NTE182 (NPN) & NTE183 (PNP)

Silicon Complementary Transistors

General Purpose Amplifier, Switch

Description:

The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.

Features:

D DC Current Gain Specified to 10A
D High Current Gain–Bandwidth Product: f

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

C

B

Total Device Dissipation (T

CEO

CB

EB

= +25°C), P

C

Derate Above 25°C 0.72W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

= 2MHz (Min) @ IC = 500mA

T

D

J

thJC

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.39°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TC =+25°C unless otherwise specified)

CEO(sus)IC

CEO

I

CEX

I

CBO

EBO

= 200mA, IB = 0, Note 1 60 – – V
VCE = 30V, IB = 0 – – 700 µA
VCE = 70V, V
VCE = 70V, V

= +150°C

T

C

VCB = 70V, IE = 0 – – 1.0 mA
VCB = 70V, IE = 0, TC = +150°C – – 10 mA
VBE = 5V, IC = 0 – – 5.0 mA

BE(off)
BE(off)

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

= 1.5V – – 1.0 mA
= 1.5V,

– – 5.0 mA

Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain h

FE

IC = 4A, VCE = 4V 20 – 100
IC = 10A, VCE = 4V 5.0 – –

Base–Emitter ON Voltage V
Collector–Emitter Saturation Voltage V

BE(on)IC
CE(sat)IC

= 4A, VCE = 4V – – 1.8 V

= 4A, IB = 400mA – – 1.1 V
IC = 10A, IB = 3.3A – – 8.0 V

Dynamic Characteristics

Current Gain–Bandwidth Product f

T

IC = 500mA, VCE = 10V,
f = 1MHz

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

.530 (13.4) Max

2.0 – – MHz

.143 (3.65) Dia Thru

.668

(17.0)

Max

.166 (4.23)

EB

.655

(16.6)

Max

C (Heat Sink Area)

Area (Bottom)

.150 (3.82) MaxHeat Sink Contact