NTE NTE183, NTE182 Datasheet
NTE182 (NPN) & NTE183 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 10A
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Device Dissipation (T
CEO
CB
EB
= +25°C), P
C
Derate Above 25°C 0.72W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
= 2MHz (Min) @ IC = 500mA
T
D
J
thJC
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.39°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC =+25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CEX
I
CBO
EBO
= 200mA, IB = 0, Note 1 60 – – V
VCE = 30V, IB = 0 – – 700 µA
VCE = 70V, V
VCE = 70V, V
= +150°C
T
C
VCB = 70V, IE = 0 – – 1.0 mA
VCB = 70V, IE = 0, TC = +150°C – – 10 mA
VBE = 5V, IC = 0 – – 5.0 mA
BE(off)
BE(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
= 1.5V – – 1.0 mA
= 1.5V,
– – 5.0 mA
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
IC = 4A, VCE = 4V 20 – 100
IC = 10A, VCE = 4V 5.0 – –
Base–Emitter ON Voltage V
Collector–Emitter Saturation Voltage V
BE(on)IC
CE(sat)IC
= 4A, VCE = 4V – – 1.8 V
= 4A, IB = 400mA – – 1.1 V
IC = 10A, IB = 3.3A – – 8.0 V
Dynamic Characteristics
Current Gain–Bandwidth Product f
T
IC = 500mA, VCE = 10V,
f = 1MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
.530 (13.4) Max
2.0 – – MHz
.143 (3.65) Dia Thru
.668
(17.0)
Max
.166 (4.23)
EB
.655
(16.6)
Max
C (Heat Sink Area)
Area (Bottom)
.150 (3.82) MaxHeat Sink Contact
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