NTE NTE180, NTE181 Datasheet
NTE180 (PNP) & NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
D High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Device Dissipation (T
CER
CB
CEO
EB
= +25°C), P
C
D
Derate Above 25°C 1.14W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.875°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Collector–Base Cutoff Current I
Emitter–Base Cutoff Current I
(TC =+25°C unless otherwise specified)
(BR)CERIC
CEO(sus)IC
CBO
EBO
= 200mA, RBE = 100Ω, Note 1 100 – – V
= 200mA, Note 1 90 – – V
VCB = 100V, IE = 0 – – 1.0 mA
VCB = 100V, IE = 0, TC = +150°C – – 5.0 mA
VBE = 4V, IC = 0 – – 1.0 mA
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Base–Emitter ON Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
BE(on)IC
CE(sat)IC
BE(sat)IC
FE
T
IC = 7.5A, VCE = 2V 25 – 100
= 7.5A, VCE = 2V – – 1.3 V
= 7.5A, IB = 750mA – – 0.8 V
= 7.5A, IB = 750mA – – 1.3 V
IC = 1A, VCE = 10V, f = 1MHz 2.0 – – MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h
) matched to within
FE
10% of each other.
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
NTE181 (NPN).
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.215 (5.45)
.430
(10.92)
Emitter
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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