NTE18 (NPN) & NTE19 (PNP)
Silicon Complementary Transistors
High Voltage, High Current Capacity Driver
Applications:
D Drivers for Amplifiers of up to PO = 60W
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 700mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (Note 1) 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Note 1. P
= 20ms, Duty Cycle = 1/2
W
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Transition Frequency
NTE18
NTE19 – 100 – MHz
C
J
stg
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
EBO
FE
CE(sat)IC
f
T
= 2mA 80 – – V
= 50µA 80 – – V
= 50µA 5 – – V
VCB = 50V – – 0.5 µA
VEB = 4V – – 0.5 µA
VCE = 3V, IC = 100mA 120 – 270
= 500mA, IB = 50mA – 200 400 mV
VCE = 10V, IC = 50mA
–55° to +135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
– 120 – MHz
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Capacitance
NTE18
NTE19 – 14 20 pF
C
VCB = 10V, IE = 0, f = 1MHz
ob
– 10 – pF