NTE NTE179 Datasheet
NTE179
Germanium PNP Transistor
Audio Power Amplifier, High Current Switch
Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating
conditions.
Features:
D Low Collector–Emitter Saturation Voltage:
V
CE(sat)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Volatge, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Derate above +25°C 1.25W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Junction Temperature, T
Thermal Resistance, Junction–to–Case, R
= 0.5V (Max) @ IC = 5A
CEO
CB
EB
C
B
= +25°C), P
C
J
stg
D
thJC
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
106W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to + 110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to + 110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Collector–Emitter Cutoff Current I
: (TA = +25°C unless otherwise noted)
(BR)CBOIC
(BR)EBOIE
CE(sus)IC
CBO
I
CEX
CER
VCB = 2V, IE = 0 – – 200 µA
VCE = 90V, V
VCE = 50V, REB = 100Ω – – 10 mA
= 100mA, IB = 0 40 – – V
= 100mA, IC = 0 2 – – V
= 5A 40 – – V
= 0.2V – – 20 mA
BE(off)
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
CE(sat)IC
BE(on)IC
.135 (3.45) Max
.350 (8.89)
FE
T
.875 (22.2)
Dia Max
IC = 1A, VCE = 2V 65 – 300
IC = 5A, VCE = 2V 55 – –
= 5A, IB = 100mA – – 0.5 V
= 1A, VCE = 2V – – 0.45 V
IC = 5A, VCE = 2V – – 0.60 V
IC = 500mA, VCE = 10V 500 – – kHz
Seating
Plane
.215 (5.45)
.430
(10.92)
Emitter
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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