NTE NTE38, NTE175 Datasheet
NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–
speed switching and linear amplifier applications for high–voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D Collector–Emitter Sustaining Voltage:
NTE38: V
NTE175: V
CEO(sus)
CEO(sus)
D Second Breakdown Collector Current:
NTE38 I
NTE175 I
= 875mA @ VCE = 40V
S/b
= 350mA @ VCE = 100V
S/b
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
NTE38 350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
NTE38 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Derate above 25°C 0.2W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Thermal Resistance, Junction to Case, R
= 350V @ IC = 200mA
= 300V @ IC = 200mA
CEO
CB
6Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
= +25°C), PD 35W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
J
Θ
JC
5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
C CE test
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
NTE38
V
CEO(sus)IC
NTE175 300 – – V
Collector–Emitter Sustaining Voltage
NTE38 Only
V
CEX(sus)IC
V
CER(sus)IC
Emitter–Base Breakdown Voltage
NTE38 Only
Collector Cutoff Current I
V
EBOIE
CEO
Collector Cutoff Current
NTE38
NTE175 I
Emitter Cutoff Current I
I
CEV
CEX
EBO
ON Characteristics (Note 2)
= 200mA, IB = 0 350 – – V
= 200mA, VBE = –1.5V, L = 10mH 400 – – V
= 200mA, IB = 0, RBE = 50Ω 375 – – V
= 0.5mA, IC = 0 6 – – V
VCE = 150V, IB = 0 – – 5 mA
VCE = 250V, V
VCE = 250V, V
VCE = 315V, V
VCE = 315V, V
VCE = 360V, V
VCE = 360V, V
VCE = 450V, V
VCE = 300V, V
= 1.5V – – 0.5 mA
BE(off)
= 1.5V, TC = +100°C – – 5.0 mA
BE(off)
= 1.5V – – 0.5 mA
BE(off)
= 1.5V, TC = +100°C – – 5.0 mA
BE(off)
= 1.5V – – 0.5 mA
BE(off)
= 1.5V, TC = +100°C – – 5.0 mA
BE(off)
= 1.5V – – 1.0 mA
BE(off)
= 1.5V, TC = +150°C – – 3.0 mA
BE(off)
VEB = 6V, IC = 0 – – 0.5 mA
DC Current Gain
NTE38
h
FE
IC = 1A, VCE = 4V 10 – 100
NTE175 IC = 0.1A, VCE = 10V 40 – –
IC = 1A, VCE = 2V 8 – 80
IC = 1A, VCE = 10V 25 – 100
Collector–Emitter Saturation Voltage
NTE38
V
CE(sat)IC
= 1A, IB = 125mA – – 2.0 V
NTE175 – – 0.75 V
Base–Emitter Saturation Voltage
NTE38
V
BE(sat)IC
= 1A, IB = 125mA – – 1.4
NTE175 IC = 1A, IB = 100mA – – 1.4 V
Base–Emitter ON Voltage
NTE175 Only
V
BE(on)IC
= 1A, VCE = 10V – – 1.4 V
Dynamic Characteristics
Current Gain –Bandwidth Product
NTE38
NTE175
Output Capacitance (NTE175 Only) C
f
IC = 200mA, VCE = 10V, f
T
= 5MHz,
test
Note 3
VCB = 10V, IE = 0, f = 1MHz – – 120 pF
ob
20 – – MHz
15 – – MHz
V
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. f
= |hfe| f
T
test
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