NTE NTE172A Datasheet
NTE172A
Silicon NPN Transistor
Darlington Preamp, Medium Speed Switch
Description:
The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier
input stages requiring input impedances of several megohms or extremely low level, high gain, low
noise amplifier applications.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
A
D
Derate Above 25°C 4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max.), T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
(TA = +25°C unless otherwise specified)
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+260°C. . . . . . . .
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
DC Current Gain h
Collector Cutoff Current I
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
FE
CBO
= 0.1µA, IE = 0 40 – – V
= 10mA, IB = 0 40 – – V
= 0.1µA, IE = 0 12 – – V
VCE = 5V, IC = 2mA 7000 – 70000
VCE = 5V, IC = 100mA 20000 – –
VCB = 40V, IE = 0 – – 100 nA
VCB = 40V, IE = 0, TA = +100°C – – 20 µA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics (Cont’d)
Emitter Cutoff Current I
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Base–Emitter Voltage V
EBO
BE
VEB = 12V, IC = 0 – – 100 nA
= 200mA, IB = 0.2mA – – 1.4 V
= 200mA, IB = 0.2mA – – 1.6 V
VCE = 5V, IC = 200mA – – 1.5 V
Dynamic Characteristics
Small–Signal Current Gain h
VCE = 5V, IC = 2mA, f = 1kHz 7000 – –
fe
Current Gain–High Frequency |hfe| VCE = 5V, IC = 2mA, f = 1kHz 15.6 – – dB
Current Gain–Bandwidth Product f
Input Impedance h
Collector–Base Capacitance C
Emitter Capacitance C
Noise Voltage e
VCE = 5V, IC = 2mA, f = 10MHz 60 – – MHz
T
VCE = 5V, IC = 2mA, f = 1kHz – 650 – kΩ
ie
VCB = 10V, f = 1MHz – 7.6 10.0 pF
cb
VEB = 0.5V, f = 1MHz – 10.5 – pF
eb
IC = 0.6mA, VCE = 5V,
n
= 160kΩ, f = 10Hz to 10kHz,
R
G
– 195 230
nV/pHz
B.W. = 15.7kHz
.135 (3.45) Min
.210
(5.33)
C
Max
Seating Plane
B
.500
E
.105 (2.67) Max
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.205 (5.2) Max
.021 (.445) Dia Max
.165
(4.2)
Max
.105 (2.67) Max
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