NTE NTE172A Datasheet

NTE172A

Silicon NPN Transistor

Darlington Preamp, Medium Speed Switch

Description:

The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier
input stages requiring input impedances of several megohms or extremely low level, high gain, low
noise amplifier applications.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 1) 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Total Power Dissipation (T

B

= +25°C), P

A

D

Derate Above 25°C 4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max.), T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

(TA = +25°C unless otherwise specified)

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . .

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
DC Current Gain h

Collector Cutoff Current I

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

FE

CBO

= 0.1µA, IE = 0 40 – – V
= 10mA, IB = 0 40 – – V

= 0.1µA, IE = 0 12 – – V
VCE = 5V, IC = 2mA 7000 – 70000
VCE = 5V, IC = 100mA 20000 – –
VCB = 40V, IE = 0 – – 100 nA
VCB = 40V, IE = 0, TA = +100°C – – 20 µA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics (Cont’d)

Emitter Cutoff Current I
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

Base–Emitter Voltage V

EBO

BE

VEB = 12V, IC = 0 – – 100 nA

= 200mA, IB = 0.2mA – – 1.4 V

= 200mA, IB = 0.2mA – – 1.6 V
VCE = 5V, IC = 200mA – – 1.5 V

Dynamic Characteristics

Small–Signal Current Gain h

VCE = 5V, IC = 2mA, f = 1kHz 7000 – –

fe

Current Gain–High Frequency |hfe| VCE = 5V, IC = 2mA, f = 1kHz 15.6 – – dB
Current Gain–Bandwidth Product f
Input Impedance h
Collector–Base Capacitance C
Emitter Capacitance C
Noise Voltage e

VCE = 5V, IC = 2mA, f = 10MHz 60 – – MHz

T

VCE = 5V, IC = 2mA, f = 1kHz – 650 – kΩ

ie

VCB = 10V, f = 1MHz – 7.6 10.0 pF

cb

VEB = 0.5V, f = 1MHz – 10.5 – pF

eb

IC = 0.6mA, VCE = 5V,

n

= 160kΩ, f = 10Hz to 10kHz,

R

G

– 195 230

nV/pHz

B.W. = 15.7kHz

.135 (3.45) Min

.210

(5.33)

C

Max

Seating Plane

B

.500

E

.105 (2.67) Max

(12.7)

Min

E C B

.100 (2.54)

.050 (1.27)

.205 (5.2) Max

.021 (.445) Dia Max

.165
(4.2)
Max

.105 (2.67) Max