NTE NTE171 Datasheet

NTE171

Silicon NPN Transistor

Audio/Video Amplifier

Description:

The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and
chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.

Features:

D High Collector–Emitter Breakdown Voltage Voltage: V

(BR)CER

D Low Collector–Base Capacitance: Ccb = 3pF Max @ VCB = 20V

= 300V @ IC = 1mA

Absolute Maximum Ratings

Collector–Emitter Voltage (I
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

:

= 1mA, RBE = 10kΩ, Note 1), V

C

CBO

EBO

CER

Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 700mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Total Power Dissipation (T

B

= +25°C), P

A

D

Derate Above 25°C 13.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 50mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction to Ambient, R
Thermal Resistance, Junction to Case, R

J

Θ

JA

Θ

JC

Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

300V. . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6.25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h

Dynamic Characteristics

Current Gain–Bandwidth Product f
Collector–Base Capacitance C

(BR)CERIC

CBO
EBO

FE

T
cb

= 1mA, IB = 0, Note 1 300 – – V
VCB = 300V, IE = 0 – – 10 µA
VBE = 5V, IC = 0 – – 10 µA

IC = 4mA, VCE = 10V 20 – –
IC = 20mA, VCE = 10V 30 – 90
IC = 40mA, VCE = 10V 20 – –

IC = 20mA, VCE = 10V, f = 20MHz 50 – – MHz
VCB = 20V, IE = 0, f = 1MHz – – 3 pF

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

C

.132 (3.35) Dia

.180 (4.57).380 (9.56)

1.200

(30.48)

Ref

.500

(12.7)

.300

(7.62)

.400

(10.16)

Min

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

EBC

.100 (2.54) .100 (2.54)