NTE NTE165 Datasheet
NTE165
Silicon NPN Transistor
TV Horizontal Output
Description:
The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal
output applications.
Features:
D High Voltage
D High Power
D High Switching Speed
D Good Stability
Applications:
D Consumer
D Power Supply
D Color TV Horizontal Deflection
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), V
Collector–Emitter Voltage (IB = 0), V
Emitter–Base Voltage (IC = 0), V
Collector Current, I
C
EB
CES
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (tp < 5ms) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), P
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
stg
tot
J
Maximum Thermal Resistance, Junction–to–Case, R
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
Emitter–Base Voltage V
CEO(sus)IC
CES
EBO
EBO
VCE = 1500V, VBE = 0 – – 1.0 mA
VCE = 1500V, VBE = 0, TC = +1 25°C – – 2.0 mA
VEB = 5V, IC = 0 – – 100 µA
= 100mA 700 – – V
IE = 10mA, IC = 0 10 – – V
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 1.5%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Current Gain–Bandwidth Product f
Switching Characteristics (Inductive Load)
Storage Time t
Fall Time t
CE(sat)IC
BE(sat)IC
T
s
f
= 4.5A, IB = 2A, Note 1 – – 1.0 V
= 4.5A, IB = 2A, Note 1 – – 1.3 V
VCE = 5V, IC = 100mA, f = 5MHz – 7 – MHz
VCC = 140V, IC = 4.5A, hFE = 2.5,
LC = 0.9mH, LB = 3µH
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 1.5%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
– 7.0 – µs
– 0.55 – µs
Seating
Plane
.215 (5.45)
.430
(10.92)
Emitter
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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