NTE NTE163A Datasheet
NTE163A
Silicon NPN Transistor
Horizontal Deflection
Description:
The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color
deflection circuits.
Features:
D Collector–Emitter Voltage: V
D Collector–Emitter Sustaining Voltage: V
D Switching Times With Inductive Loads: t
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO(sus)
CEX
EB
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 7.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Base Current, I
Total Device Dissipation (T
B
= +95°C), P
C
Derate Above 95°C 0.625W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (For Soldering, 1/8” from case for 5sec), T
CEX
stg
= 1500V
CEO(sus)
D
J
thJC
= 700V
= 0.4µs (Typ) @ IC = 4.5A
f
700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +115°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +115°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+275°C. . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter–Base Voltage V
ON Characteristics (Note 2)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Switching Characteristics
Fall Time t
CEO(sus)IC
CE(sat)IC
BE(sat)IC
CES
EBO
FE
T
ob
f
= 100mA, IB = 0 700 – – V
VCE = 1500V, VBE = 0 – – 1.0 mA
IE = 10mA, IC = 0 5 – – V
IC = 4.5A, VCE = 5V 2.25 – –
= 4.5A, IB = 2A – – 5 V
= 4.5A, IB = 2A – – 1.5 V
IC = 100mA, VCE = 5V, f = 1MHz – 4 – MHz
VCB = 10V, IE = 0, f = 1MHz – 125 – pF
IC = 4.5A, IB = 1.8A, LB = 10µH – 0.6 – µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
.215 (5.45)
.430
(10.92)
Emitter
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
Loading...