NTE NTE162 Datasheet
NTE162
Silicon NPN Transistor
TV Vertical Deflection
Description:
The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters,
converters, regulators, and switching circuits.
Features:
D High Voltage: V
D Gain Specified to 3.5A
D High Frequency Response to 2.5MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
B
Total Device Dissipation (T
Derate Above 25°C 1W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEX
= 400V
CEX
CB
EBO
= +25°C), P
C
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
(BR)CEO(sus)IC
CEX
EBO
J
thJC
= 100mA, IB = 0, Note 1 325 – – V
VCE = 400V, V
VCE = 400V, V
= +125°C
T
C
VBE = 5V, IC = 0 – – 2.0 mA
EB(off)
EB(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1.5V – – 2.5
= 1.5V,
– – 1.0 mA
1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
CE(sat)
BE(sat)
FE
T
IC = 2.5A, VCE = 5V 15 – 35
IC = 3.5A, VCE = 5V 10 – –
IC = 2.5A, IB = 0.5A – – 0.7 V
IC = 2.5A, IB = 0.5A – – 1.5 V
IC = 200mA, VCE = 10V, f = 1MHz 2.5 – – MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.215 (5.45)
.430
(10.92)
Emitter
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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