NTE NTE161 Datasheet
NTE161
Silicon NPN Transistor
VHF–UHF Amplifier, Mixer/Osc
Features:
D High Current Gain–Bandwidth Product: fT = 600MHz (Min) @ f = 100MHz
D Low Output Capacitance: C
= 1.7pF (Max) @ VCB = 10V
ob
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
CES
CBO
EBO
C
= +25°C), P
A
D
Derate Above 25°C 1.14mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), P
D
Derate Above 25°C 1.71mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
stg
(TA = +25°C unless otherwise specified)
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
(BR)CBOIC
(BR)EBOIE
CEO(sus)IC
CBO
VCB = 15V, IE = 0 – – 0.01 µA
VCB = 15V, IE = 0, TA = +150°C – – 1.0 µA
= 1.0µA, IE = 0 30 – – V
= 10µA, IC = 0 3.0 – – V
= 3mA, IB = 0 15 – – V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
FE
IC = 3mA, VCE = 1V 20 – –
= 10mA, IB = 1mA – – 0.4 V
= 10mA, IB = 1mA – – 1.0 V
Small–Signal Characteristics
Current Gain–Bandwidth Product f
T
IC = 10mA, VCE = 10V,
600 – – MHz
f = 100MHz, Note 1
Output Capacitance C
obo
VCB = 10V, IE = 0, f = 140kHz – – 1.7 pF
VCB = 0, IE = 0, f = 140kHz – – 3.0 pF
Input Capacitance C
ibo
Noise Figure NF IC = 1mA, VCE = 6V,
VEB = 0.5V, IC = 0, f = 140kHz – – 2.0 pF
– – 6.0 dB
= 400Ω, f = 60MHz
R
G
Functional Test
Amplifier Power Gain G
Power Output P
pe
VCB = 12V, IC = 6mA, f = 200MHz 15 – – dB
VCB = 15V, IC = 8mA, f = 500MHz 30 – – mW
o
Collector Efficiency η VCB = 15V, IC = 8mA, f = 500MHz 25 – – %
Note 1. fT is defined as the frequency at which |hfe| extrapolates to unity.
.190
(4.82)
.500
(12.7)
Min
.018 (0.45) Dia
Emitter
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
Base
Collector
45°
.040 (1.02)
Case
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