NTE NTE16005, NTE16004 Datasheet
NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
High Current, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
B
Total Device Dissipation (T
Derate Above 25°C 0.057mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
CEO
CBO
EBO
C
= +25°C), P
C
stg
D
J
thJC
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage
NTE16004
NTE16005 – – 0.5 V
Base–Emitter ON Voltage V
Small–Signal Characteristics
Small–Signal Current Gain h
(TA = +25°C unless otherwise specified)
(BR)CEO)IC
CEX
EBO
FE
V
CE(sat)
BE(on)IC
fe
= 100mA, IB = 0 75 – – V
VCE = 100V, VBE = 1.5V – – 0.1 mA
VCE = 70V, VBE = 1.5V, TC = +150°C – – 5.0 mA
VBE = 7V, IC = 0 – – 0.1 mA
IC = 500mA, VCE = 4V 30 – 130
IC = 1A, VCE = 2V 10 – –
IC = 500mA, IB = 50mA – – 0.7 V
= 500mA, VCE = 4V – – 1.1 V
IC = 50mA, VCE = 4V, f = 10MHz 5 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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