Silicon NPN Transistor
RF Power Output, P
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Total Device Dissipation (T
Derate Above 25°C 131mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
CEO
CB
EB
= +25°C), P
C
stg
D
NTE16002
= 13.5W, 175MHz
O
J
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
23W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
(TA = +25°C unless otherwise specified)
(BR)CEO(sus)IC
(BR)EBO
CEO
I
CEX
I
CBO
EBO
FE
CE(sat)
BE(sat)
T
ob
= 200mA, IB = 0, Note 1 40 – – V
IE = 0.25mA, IC = 0 4 – – V
VCE = 30V, IB = 0 – – 0.25 mA
VCE = 30V, V
= +200°C
T
C
VCE = 65V, V
VCB = 65V, IE = 0 – – 1 mA
VBE = 4V, IC = 0 – – 0.25 mA
VCE = 5V, IC = 1A 5 – –
IC = 500mA, IB = 100mA – – 1.0 V
IC = 1A, IB = 5A – – 1.5 V
VCE = 28V, IC = 150mA, f = 100MHz – 400 – MHz
VCB = 30V, IE = 0, f = 100kHz – 16 20 pF
= 1.5V,
BE(off)
= 1.5V – – 5 mA
BE(off)
– – 10 mA
Note 1. Pulsed through 25mH inductor.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Functional Tests
Power Input P
Common–Emitter Amplifier Power Gain G
Collector Efficiency η 50 – – %
in
pe
VCE = 28V, P
= 2.5W, f = 175MHz – – 0.25 W
out
10 – – dB
.200
(5.08)
Collector
Dia
Emitter
.430
(10.92)
Base
.038 (0.98) Dia
.480
(12.19)
Max
.113 (2.88)
10–32 NF–2A
.340 (8.63)
Dia
.078
(1.97)
Max
.320
(8.22)
Max
.455
(11.58)
Max
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