NTE NTE16001 Datasheet
NTE16001
Silicon NPN Transistor
Video IF Amp
Features:
D High Transistion Frequency
D Good Linearity of DC Current Gain
D An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly
Mounted Flush to PC Board Surface.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Collector–Base Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
DC Current Gain h
Collector–Emitter Saturation Volatge V
Transistion Frequency f
(TA = +25°C unless otherwise specified)
CBO
CEO
C
J
stg
(TA = +25°C unless otherwise specified)
CEO
CBOIC
CEOIC
EBOIE
CE(sat)IC
VCE = 20V, IB = 0 – – 10 µA
VCB = 10V, IE = –10mA 20 50 100
FE
VCB = 10V, IE = –10mA, f =
T
100MHz
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10µA, IE = 0 45 – – V
= 1mA, IB = 0 35 – – V
= 10µA, IC = 0 4 – – V
= 20mA, IB = 2mA – – 0.5 V
300 500 – MHz
Small–Signal Reverse Transfer Capacitance
Power Gain PG VCB = 10V, IE = –10mA, f = 58MHz – 18 – dB
C
VCE = 10V, IC = 1mA – – 1.5 pF
re
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