NTE NTE160 Datasheet

NTE160

Germanium PNP Transistor

RF–IF Amp, FM Mixer OSC

Description:

The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream­plifier mixer and oscillator up to 900MHz.

Absolute Maximum Ratings:

Collector–Emitter Voltage (VBE = 0), V
Collector–Emitter Voltage, (I
Emitter–Base Voltage (I
Collector Current, I

C

Total Power Dissipation (T

= 0), V

B

= 0), V

C

= +45°C), P

A

EBO

Operating Junction Temperature, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

CES

CEO

tot

J

thJC

Thermal Resistance, Junction–to–Ambient, R

thJA

–30° to +75°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400°C/W max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

750°C/W max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I
Base–Emitter Voltage V

DC Current Gain h

Transition Frequency f
Reverse Capacitance –C
Noise Figure NF IC = –2mA, VCE = –10V, Rg = 60Ω,

Power Gain G

: (TC = +25°C unless otherwise specified)

CES

I

CEO
EBO

BE

FE

T

pb

VCE = –20V, VBE = 0 – – –8 µA
VCE = –15V, IB = 0 – – –500 µA
VEB = –0.3V, IC = 0 – – –100 µA
IC = –2mA, VCE = –10V – –350 – mV
IC = –5mA, VCE = –5V – –400 – mV
IC = –2mA, VCE = –10V – 50 –
IC = –5mA, VCE = –5V – 42 –
IC = –2mA, VCE = –10V, f = 100MHz – 700 – MHz
IC = –2mA, VCE = –10V, f = 450kHz – 0.23 – pF

re

f = 800MHz
IC = –2mA, VCE = –10V, RL = 2kΩ,

f = 800MHz

– 5 6 dB

11 14 – dB

.190

(4.82)

.500

(12.7)

Min

.220 (5.58) Dia Max

.185 (4.7) Dia Max

.030 (.762) Max

.018 (0.45)

Base

Emitter

Collector

45°

Case

.040 (1.02)