NTE NTE16, NTE17 Datasheet

NTE16 (NPN) & NTE17 (PNP)
Silicon Complementary Transistors
Low Noise, General Purpose Amplifier
Features:
D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise
Absolute Maximum Ratings:
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I Collector Dissipation, P
EBO
C
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Operating Junction Temperature, T Storage Temperature Range, T
Electrical Charactristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V Collector–Base Breakdown Voltage V Emitter–Base Breakdown Voltage V Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Collector–Emitter Saturation Voltage
NTE16
stg
(TA = +25°C unless otherwise specified)
J
(BR)CEOIC (BR)CBOIC (BR)EBOIE
CBO EBO
FE
V
CE(sat)
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1mA 40 V = 50µA 50 V
= 50µA 5 V VCB = 30V 0.5 µA VEB = 4V 0.5 µA VCE = 6V, IC = 1mA 270 560
IC = 50mA, IB = 5mA 0.4 V
NTE17 0.1 0.5 V
Transition Frequency
NTE16
NTE17 140 MHz
Output Capacitance
NTE16
NTE17 4.0 5.0 pF
f
T
C
ob
VCE = 12V, IE = 2mA 180 MHz
VCB = 12V, IE = 0, f = 1MHz 2.0 3.5 pF
.102 (2.6) .280 (7.11)
.100 (2.54)
E
CB
.185 (4.7)
.138 (3.5)
.022 (0.55).051 (1.29)
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