NTE16 (NPN) & NTE17 (PNP)
Silicon Complementary Transistors
Low Noise, General Purpose Amplifier
Features:
D Low Collector Saturation Voltage
D Low Output Capacitance
D Low Noise
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
EBO
C
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Charactristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage
NTE16
stg
(TA = +25°C unless otherwise specified)
J
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
EBO
FE
V
CE(sat)
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1mA 40 – – V
= 50µA 50 – – V
= 50µA 5 – – V
VCB = 30V – – 0.5 µA
VEB = 4V – – 0.5 µA
VCE = 6V, IC = 1mA 270 – 560
IC = 50mA, IB = 5mA – – 0.4 V
NTE17 – 0.1 0.5 V
Transition Frequency
NTE16
NTE17 – 140 – MHz
Output Capacitance
NTE16
NTE17 – 4.0 5.0 pF
f
T
C
ob
VCE = 12V, IE = 2mA – 180 – MHz
VCB = 12V, IE = 0, f = 1MHz – 2.0 3.5 pF