NTE NTE159 Datasheet

NTE159

Silicon PNP Transistor

Audio Amplifier, Switch

(Compl to NTE123AP)

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CBO

EBO

= 25°C), P

A

C

D

Derate Above 25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= 25°C), P

C

D

Derate Above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction to Case, R

J

θ

JC

Thermal Resistance, Junction to Ambient, R

θ

JA

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com-

plementary pairs have their gain specification (h

) matched to within 10% of each other.

FE

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

EBO

VCB = 50V, IE = 0 – – 50 nA
VCB = 50V, IE = 0, TA = +75°C – – 5 µA

= 10mA, IB = 0 80 – – V
= 10µA, IE = 0 80 – – V
= 10µA, IC = 0 5 – – V

– – 100 nA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

VCE = 10V, IC = 0.1mA 25 – –
VCE = 10V, IC = 1mA 40 – –
VCE = 10V, IC = 10mA 50 – 250
VCE = 10V, IC = 100mA 40 – –
VCE = 10V, IC = 500mA 30 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 150mA, IB = 15mA, Note 2 – – 0.15 V

IC = 500mA, IB = 50mA, Note 2 – – 0.5 V

Base–Emitter Saturation Voltage V

BE(sat)IC

= 150mA, IB = 15mA, Note 2 – – 0.9 V

IC = 500mA, IB = 50mA, Note 2 – – 1.1 V

Base–Emitter ON Voltage V

BE(on)IC

= 500mA, VCE = 500mV – – 1.1 V

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance Ci
Input Impedance h
Voltage Feedback Ratio h
Small–Signal Current Gain h
Output Admittance h

IC = 50mA, VCE = 10V, f = 100MHz 100 – 500 MHz

T

VCB = 10V, IE = 0, f = 100kHz – – 30 pF

ob

VCB = 10V, IE = 0, f = 100kHz – – 110 pF

b

IC = 10mA, VCE = 10V, f = 1kHz – 550 – kΩ

ie

IC = 10mA, VCE = 10V, f = 1kHz – 100 – x 10

re

IC = 10mA, VCE = 10V, f = 1kHz – 200 –

fe

IC = 10mA, VCE = 10V, f = 1kHz – 100 – µmhos

oe

Noise Figure NF IC = 100µA, VCE = 10V, RS = 1kΩ,

f = 1kHz

–6

– – 3 dB

Switching Characteristics

Turn–On Time t

Turn–Off Time t

on

off

VCC = 30V, V
I

= 500mA, IB1 = 50mA

C

BE(off)

= 3.8V,

VCC = 30V, IC = 500mA,
I

= IB2 = 50mA

B1

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

– – 100 ns

– – 400 ns