NTE NTE157 Datasheet
NTE157
Silicon NPN Transistor
Audio Power Amp, High Voltage Converter
(Compl to NTE39)
Description:
The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated
equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays.
Features:
D Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA
D Current–Gain – Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
C
Derate Above 25°C 0.16W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction to case, R
= 10MHz (Min) @ IC = 50mA
T
D
J
Θ
JC
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
325V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
(BR)CEOIC
CEO
I
CEX
I
CBO
EBO
VCE = 200V, IB = 0 – – 0.1 mA
VCE = 300V, V
VCE = 300V, V
VCB = 325V, IE = 0 – – 10 µA
VEB = 6V, IC = 0 – – 10 µA
= 100mA (Inductive), L = 50mH 300 – – V
= 1mA, IB = 0 300 – – V
= 1.5V – – 0.1 mA
EB(off)
= 1.5V, TC = +100°C – – 1.0 mA
EB(off)
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V
Dynamic Characteristics
Current–Gain–Bandwidth Product f
Output Capacitance C
Small–Signal Current Gain h
CE(sat)IC
FE
BE
IC = 50mA, VCE = 10V 25 – –
IC = 100mA, VCE = 10V 30 – 250
IC = 250mA, VCE = 10V 15 – –
IC = 500mA, VCE = 10V 5 – –
= 100mA, IB = 10mA – – 1 V
IC = 250mA, IB = 25mA – – 2.5
IC = 500mA, IB = 100mA – – 10
IC = 100mA, VCE = 10V – – 1 V
IC = 50mA, VCE = 10V, f = 10MHz, Note 2 10 – – MHz
T
VCB = 10V, IE = 0, f = 100kHz – – 25 pF
ob
IC = 100mA, VCE = 10V, f = 1kHz 20 – –
fe
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f
is defined as the frequency at which |hfe| extrapolates to unity.
T
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.175
(4.45)
Max
.118 (3.0)
Dia
.030 (.762) Dia
ECB
.090 (2.28)
.130 (3.3)
Max
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