NTE NTE155 Datasheet

NTE131 (PNP) & NTE155 (NPN)

Germanium Complementary Transistors

Audio Power Amplifier

Description:

The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese
TO66 type package designed for use in audio power amplifier applications.

Absolute Maximum Ratings:

(TA = +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

32V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Voltage, V

CES

32V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, V

EBO

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Current, I

C

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P

C

6W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T

J

+90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

–55° to +90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (h

FE

) matched to within

10% of each other.

Electrical Characteristics:

(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

CEV

VCE = 32V, VEB = 1V – – 1 mA

Emitter Cutoff Current I

EBO

VEB = 10V, IC = 0 – – 1 mA

DC Current Gain h

FE1

VCB = 0, IE = 100mA 35 – 170

h

FE2

VCB = 0, IE = 1A 36 – 185

Common–Emitter Cutoff Frequency f

α

e

VCB = 2V, IE = 100mA 10 15 – kHz

Base–Emitter ON Voltage V

BE

VCB = 0, IE = 1A – 0.4 – V

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 1A, IB = 100mA – 0.08 – V

.593 (15.08)

Dia

.031

(.792)

.290 (7.36)

.295 (7.5)

.039 (1.0) Dia

.944 (24.0)

Base

.530 (13.5)

.315
(8.0)

Emitter

Collector/Case

.157 (4.0)

Dia

(2 Places)