NTE NTE154 Datasheet

NTE154

Silicon NPN Transistor

High Voltage Video Output

Description:

The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output
to drive a color CRT.

Features:

D High Voltage: V
D Low Capacitance: C
D High Frequency: f
D High Power Dissipation: P

= 300V Min @ IC = 5mA

CEO

= 3pF Max @ VCB = 20V

ob

= 50MHz Min @ IC = 15mA

t

= 7W @ TC = +25°C

D

CBO

EBO

(Note 1)

CEO

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

Absolute Maximum Ratings:

Collector to Base Voltage, V
Collector to Emitter Voltage (Note 2), V
Emitter to Base Voltage, V
Total Power Dissipation (Note 3, Note 4), P

TC = +25°C 7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

Operating Junction Temperature, T
Storage Temperature Range, T

opr

stg

Lead Temperature (During Soldering, 60sec), T

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. These rati ng s a r e l i mit in g v al ue s a b ove whic h t h e s e rvi ceability o f t his d evice m ay b e i mpaired.
Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 3. These ratings are steady state limits.
Note 4. These ratings give a maximum junction temperature of +200°C and junction to case thermal

resistance of + 2 5°C/W (derating factor of 40mW/°C); junction to ambient thermal resistance
of +175°C/W (derating factor of 5.71mW/°C).

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Base Breakdown Voltage V
Emitter Base Breakdown Voltage V

(BR)CBOIC
(BR)EBOIE

Collector Cutoff Current I

Emitter Cutoff Current I
DC Current Gain h

Collector Emitter Sustaining Voltage V
Base Emitter Saturating Voltage V
Collector Emitter Saturating Voltage V

CEO(sus)IC

BE(sat)IC
CE(sat)IC

High Frequency Current Gain h

Collector Base Capacitance C
Emitter Base Capacitance C

CBO

EBO

FE

fe

cb
eb

= 100µA, IE = 0 300 – – V

= 100µA, IC = 0 7 – – V
IE = 0, VCB = 200V – 1.0 100 nA
IE = 0, VCB = 200V, TA = +125°C – 0.2 5.0 µA
IC = 0, VEB = 6V – 1.0 100 nA
IC = 1mA, VCE = 20V 20 50 –
IC = 10mA, VCE = 20V, Note 5 40 100 –
IC = 30mA, VCE = 20V, Note 5 40 100 –

= 5mA, IB = 0, Note 2, Note 5 300 – – V

= 20mA, IB = 2mA, Note 5 – 0.74 0.85 V

= 20mA, IB = 2mA, Note 5 – 0.35 1.0 V
IC = 15mA, VCE = 150V, f = 20MHz 2.5 4.0 –
IC = 3mA, VCE = 270V, f = 20MHz 2.0 2.5 –
IC = 30mA, VCE = 30V, f = 20MHz,

= 9kΩ

R

L

2.0 4.0 –

IE = 0, VCB = 20V – 2.5 3.0 pF
IC = 0, VEB = 500mV – 45 70 pF

Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 5. Pulse Conditions: Length = 300µs, Duty Cycle = 1%.

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260

(6.6)

Max

.500

(12.7)

Min

.018 (0.45)

Base

Emitter

Collector/Case

45°

.031 (.793)