NTE NTE154 Datasheet

NTE154

Silicon NPN Transistor

High Voltage Video Output

Description:

The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT.

Features:

D High Voltage: V D Low Capacitance: C D High Frequency: f D High Power Dissipation: P

= 300V Min @ IC = 5mA

CEO

= 3pF Max @ VCB = 20V

= 50MHz Min @ IC = 15mA

= 7W @ TC = +25°C

CBO

EBO

(Note 1)

CEO

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Absolute Maximum Ratings:

Collector to Base Voltage, V Collector to Emitter Voltage (Note 2), V Emitter to Base Voltage, V Total Power Dissipation (Note 3, Note 4), P

TC = +25°C 7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T Storage Temperature Range, T

opr

stg

Lead Temperature (During Soldering, 60sec), T

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. These rati ng s a r e l i mit in g v al ue s a b ove whic h t h e s e rvi ceability o f t his d evice m ay b e i mpaired. Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 3. These ratings are steady state limits. Note 4. These ratings give a maximum junction temperature of +200°C and junction to case thermal

resistance of + 2 5°C/W (derating factor of 40mW/°C); junction to ambient thermal resistance of +175°C/W (derating factor of 5.71mW/°C).

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Base Breakdown Voltage V Emitter Base Breakdown Voltage V

(BR)CBOIC (BR)EBOIE

Collector Cutoff Current I

Emitter Cutoff Current I DC Current Gain h

Collector Emitter Sustaining Voltage V Base Emitter Saturating Voltage V Collector Emitter Saturating Voltage V

CEO(sus)IC

BE(sat)IC CE(sat)IC

High Frequency Current Gain h

Collector Base Capacitance C Emitter Base Capacitance C

CBO

EBO

cb eb

= 100µA, IE = 0 300 – – V

= 100µA, IC = 0 7 – – V IE = 0, VCB = 200V – 1.0 100 nA IE = 0, VCB = 200V, TA = +125°C – 0.2 5.0 µA IC = 0, VEB = 6V – 1.0 100 nA IC = 1mA, VCE = 20V 20 50 – IC = 10mA, VCE = 20V, Note 5 40 100 – IC = 30mA, VCE = 20V, Note 5 40 100 –

= 5mA, IB = 0, Note 2, Note 5 300 – – V

= 20mA, IB = 2mA, Note 5 – 0.74 0.85 V

= 20mA, IB = 2mA, Note 5 – 0.35 1.0 V IC = 15mA, VCE = 150V, f = 20MHz 2.5 4.0 – IC = 3mA, VCE = 270V, f = 20MHz 2.0 2.5 – IC = 30mA, VCE = 30V, f = 20MHz,

= 9kΩ

2.0 4.0 –

IE = 0, VCB = 20V – 2.5 3.0 pF IC = 0, VEB = 500mV – 45 70 pF

Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 5. Pulse Conditions: Length = 300µs, Duty Cycle = 1%.

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260

(6.6)

Max

.500

(12.7)

Min

.018 (0.45)

Base

Emitter

Collector/Case

45°

.031 (.793)