NTE NTE152, NTE153 Datasheet

NTE152 (NPN) & NTE153 (PNP)

Silicon Complementary Transistors

Audio Power Amplifier, Switch

Description:

The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.

Features:

D Good Linearity of h

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Emitter Current, I
Base Current, I

B

Collector Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T

FE

CBO

CEO

EBO

C

E

90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25°C), P

C

J

stg

C

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h

) matched to within

FE

10% of each other.

Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-

mentary pairs have their gain specification (h

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V
Transition Frequency f
Collector Output Capacitance C

(TA = +25°C unless otherwise specified)

(BR)CEOIC

CBO
EBO

FE1

h

FE2

CE(sat)IC

BE

T
ob

VCB = 90V, IE = 0 – – 20 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 0.5A 40 – 200
VCE = 5V, IC = 3A 15 – –

VCE = 5V, IC = 3A – – 1.5 V
VCE = 5V, IC = 0.5A 3 8 – MHz
VCB = 10V, IE = 0, f = 1MHz – 85 – pF

= 50mA, IB = 0 90 – – V

= 3A, IB = 0.3A – – 1.5 V

) matched to within 10% of each other.

FE

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

.100 (2.54)

Collector/Tab