NTE15032, NTE15033, NTE15040, & NTE15041
Integrated Circuit
TV Fixed Voltage Regulator
Features:
D Triple Diffused Darlington Transistor Chips Incorporated
D Compact Plastic Package with Industry Standard Reliability
D Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, V
Output Current, I
Power Dissipation (TC = +100°C), P
Maximum Power Transistor Junction Temperature, T
Operating Temperature Range (TC), T
Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
IN
O
D
J
opr
stg
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–20° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltage
NTE15032
NTE15033 134.2 135.0 135.8 V
NTE15040 VAC = 161V, IIn = 7.2mA 119.2 120.0 120.8 V
NTE15041 124.2 125.0 125.8 V
Load Regulation ∆V
Output Voltage Temperature
Coefficient
Input–Output Saturation Voltage V
Input–Output Voltage V
DC Current Gain h
Power Transistor Thermal
Resistance
Input–Output Cutoff Current I
Output–Base Reverse Current
Capacity
Note 1. Recommended Case Temperature: T
V
OUT
LOADIO
CE(sat)IC
CEOICEO
FE
R
thJC
CEO
I
EB(S/B)
VAC = 161V, IIn = 6.9mA 129.2 130.0 130.8 V
= 250mA to 500mA – ±0.8 – V
VIN = VAC, IO = 500mA,
= –20° to +100°C
T
C
= 1A, IB = 10mA – – 1.5 V
= 10mA, IB = 0 200 – – V
IC = 1A, VCE = 4V 1500 – 6500
Between Junction and Stem
Upper Surface
VCE = 200V,
Pin1, Pin2, and Pin5 Open
t = 65msec
(Between Emitter–Base)
= +100°C.
opr
– ±0 – mV/°C
– 1.8 – °C/W
– – 100 µA
– 300 mA