NTE NTE15 Datasheet

NTE15

Silicon NPN Transistor

VHF Amp, Mixer, Oscillator, UHF OSC

Features:

D High Transition Frequency: fT = 1.1GHz
D Low Base Resistance and High Gain
D Excellent Noise Characteristics

Applications:

D VHF Mixers and Oscillators
D UHF Oscillators

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EBO

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

stg

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

19V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Transition Frequency f
Output Capacitance C
Collector–Base Time Constant C

: (TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

T
ob

dbb

VCB = 20V – – 0.5 µA
VEB = 3V – – 0.5 µA
VCE = 10V, IC = 5mA 39 – – –

VCE = 5V, IE = 10mA – 600 1100 MHz
VCB = 10V, f = 1MHz – 1.2 1.5 pF
IC = 10mA, VCB = 5V,

f = 31.8MHz

= 1mA 19 – – V
= 50µA 30 – – V
= 50µA 5 – – V

= 10mA, IB = 1mA – 0.1 – V

– 10 15 pS

.102

(2.6)

.280 (7.11)

.100 (2.54)

EC B

.185 (4.7)

.138 (3.5)

.022 (0.55).051 (1.29)