NTE NTE14 Datasheet

NTE14

Silicon PNP Transistor

High Power, Low Frequency Driver

Features:

D High Power Compact FTR Package: PC = 750mW
D High Breakdown Voltage: V

Absolute Maximum Ratings

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

700mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Collector Dissipation, P
Junction Temperature, T

CBO

CEO

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EBO

750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

+135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

Storage Temperature Range, T

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

: (TA = +25°C unless otherwise specified)

= 80V

CEO

: (TA = +25°C unless otherwise specified)

stg

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

VCB = 50V – – 0.5 µA

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 2mA 80 – – V
= 50µA 80 – – V
= 50µA 5 – – V

Emitter Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Transition Frequency f
Output Capacitance C

CE(sat)IC

EBO

FE

T
ob

VEB = 4V – – 0.5 µA
VCE = 3V, IC = 100mA 120 – 270 –

= 500mA, IB = 50mA – 0.2 0.4 V
VCE = 10V, IE = 50mA – 100 – MHz
VCB = 10V, IE = 0, f = 1MHz – 14 20 pF

.102

(2.6)

.280 (7.11)

.100 (2.54)

EC B

.185 (4.7)

.138 (3.5)

.022 (0.55).051 (1.29)