NTE132
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I
G
Total Device Dissipation (T
Derate Above 25°C 2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DG
GS
A
= 25°C), P
D
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 1/16” from case for 10sec), T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Gate–Source Breakdown Voltage V
Gate Reverse Current I
Gate–Source Cutoff Voltage V
Gate–Source Voltage V
Zero–Gate–Voltage Drain Current I
Forward Transconductance g
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 100MHz 2000 – – µmho
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz – – 50 µmho
(TA = +25°C unless otherwise specified)
(BR)GSSIG
GSS
GS(off)ID
DSS
GS
fs
J
L
= 1µA, VDS = 0 –25 – – V
VGS = 15V, VDS = 0 – – –2 nA
VGS = 15V, VDS = 0, TA = +100°C – – –2 nA
= 2nA, VDS = 15V – – –8 V
ID = 50µA, VDS = 15V –0.5 – –7.5 V
VDS = 15V, VGS = 0 2 – 20 mA
VDS = 15V, VGS = 0, f = 1kHz 2500 – 7000 µmho
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . .