NTE NTE132 Datasheet

NTE132
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, V Gate–Source Voltage, V Gate Current, I
G
Total Device Dissipation (T
Derate Above 25°C 2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DG
GS
A
= 25°C), P
D
–25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 1/16” from case for 10sec), T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Gate–Source Breakdown Voltage V Gate Reverse Current I
Gate–Source Cutoff Voltage V Gate–Source Voltage V Zero–Gate–Voltage Drain Current I Forward Transconductance g Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 100MHz 2000 µmho Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz 50 µmho
(TA = +25°C unless otherwise specified)
(BR)GSSIG
GSS
GS(off)ID
DSS
GS
fs
J
L
= 1µA, VDS = 0 –25 V VGS = 15V, VDS = 0 –2 nA VGS = 15V, VDS = 0, TA = +100°C –2 nA
= 2nA, VDS = 15V –8 V ID = 50µA, VDS = 15V –0.5 –7.5 V VDS = 15V, VGS = 0 2 20 mA VDS = 15V, VGS = 0, f = 1kHz 2500 7000 µmho
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . . . . . . . . . . .
.060
(1.52)
Min
.207 (5.28) Dia
.180
(4.57)
Seating
Plane
Source
.500
(12.7)
Min
.018 (0.45)
.100 (2.54) Dia
Drain
Gate
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