NTE NTE13 Datasheet

NTE13

Silicon NPN Transistor

Low Voltage Output Amp

Features:

D Low Collector–Emitter Saturation Voltage
D High DC Current Gain
D An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by

Taping and Magazine Packaging

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Collector–Base Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transistion Frequency f
Collector Capaciatnce C

(TA = +25°C unless otherwise specified)

Note 1. Pulse Test

CBO

CBOIC
CEOIC
EBOIE

FE

CE(sat)IC
BE(sat)IC

VCB = 25V, IC = 0 – – 100 nA

VCE = 2V, IC = 500mA, Note 1 400 – 800
VCE = 2V, IC = 1A, Note 1 60 – –

VCB = 10V, –IE = 50mA – 200 – MHz

T

VCB = 10V, IE = 0, f = 1MHz – 10 – pF

ob

= 10µA, IE = 0 25 – – V
= 1mA, IB = 0 20 – – V
= 10µA, IC = 0 12 – – V

= 500mA, IB = 20mA – 0.13 0.4 V
= 500mA, IB = 50mA – – 1.2 V

.271 (6.9) .098

(2.5)

.137

(3.5)

BCE

.039 (1.0)
.039 (1.0)

.122
(3.1)

.098 (2.5)

.177
(4.5)

.161
(4.1)