NTE NTE129P Datasheet
NTE128P (NPN) & NTE129P (PNP)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
D High VCE Ratings
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings:
(TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current , I
C
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
TOT
TA = +25°C 0.850W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
147°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage BV
CEOIC
= 10mA, IB = 0 80 – – V
Collector Cutoff Current I
CBO
VCB = 80V – – 100 nA
Emitter Cutoff Current I
EBO
VEB = 4V – – 100 nA
DC Current Gain h
FE
IC = 10mA, VCE = 2V 100 – –
IC = 350mA, VCE = 2V 100 – 300
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 350mA – – 0.35 V
Current Gain Bandwidth Product f
T
IC = 50mA 50 – –
Output Capacitance C
ob
VCB = 10V, IE = 0, f = 1MHz – – 15 pF
.100 (2.54)
.200 (5.08)
.180 (4.57)
.018 (0.46) .015 (0.38)
.050 (1.27) .050 (1.27)
3.050 (1.27)
.090 (2.28) R
.180
(4.57)
.594
(15.09)
.140
(3.55)
E B C
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