NTE NTE126 Datasheet

Maximum Ratings:

NTE126

Germanium Mesa Transistor, PNP,

for High–Speed Switching Applications

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Total Device Dissipation (T

CE

CB

EB

= +25°C), P

A

D

Derate above 25°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

D

Derate above 25°C 4.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Junction Temperature Range, T

J

stg

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Collector–Base Breakdown Voltage

(I

= 100µAdc, IE = 0)

C

Emitter–Base Breakdown Voltage

(I

= 100µAdc, IC = 0)

E

Collector–Latch–Up Voltage

(V

= 11.5 Vdc)

CC

Symbol Min Max Unit

BV

BV

LV

CBO

EBO

CEX

15Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Vdc

15 –

Vdc

2.5 –
Vdc

11.5 –

Collector–Emitter Cutoff Current

(V

= 15Vdc)

CE

Collector–Base Cutoff Current

(V

= 6Vdc, IE = 0)

CB

DC Current Gain

(I

= 10mAdc, VCE = 0.3Vdc)

C

(I

= 50mAdc, VCE = 1Vdc)

C

(I

= 100mAdc, VCE = 1Vdc)

C

Collector–Emitter Saturation Voltage

(I

= 10mAdc, IB = 1mAdc)

C

(I

= 50mAdc, IB = 5mAdc)

C

(I

= 100mAdc, IB = 10mAdc)

C

I

CES

I

CBO

h

V

CE(sat)

FE

– 100

– 3.0

40
40
40

–
–
–

0.18

0.35

0.60

µAdc

µAdc

–
–
–
–

Vdc

Electrical Characteristics (Cont’d): (TA = 25°C)

Parameter

Base–Emitter Saturation Voltage

(I

= 10mAdc, IB = 1mAdc)

C

(I

= 50mAdc, IB = 5mAdc)

C

(I

= 100mAdc, IB = 10mAdc)

C

Symbol Min Max Unit

V

BE(sat)

Current–Gain–Bandwidth Product f

(IE = 20mAdc, VCB = 1.0Vdc, f = 100MHz)

Output Capacitance

(V

= 10Vdc, IE = 0, f = 1MHz)

CB

Emitter Transition Capacitance

(V

= 1Vdc)

EB

C

C

Turn–On Time

(I

= 10mAdc, IB1 = 5mAdc, V

C

(I

= 100mAdc, IB1 = 5mAdc, V

C

BE(off)

BE(off)

= 1.25Vdc)

= 1.25Vdc)

Turn–Off Time

(I

= 10mAdc, IB1 = 1mAdc, IB2 = 0.25mAdc)

C

(I

= 100mAdc, IB1 = 5mAdc, IB2 = 1.25mAdc)

C

Total Control Charge

(I

= 10mAdc, IB = 1mAdc)

C

(I

= 100mAdc, IB = 5mAdc)

C

t

t

Q

T

T

ob

Te

on

off

Vdc

0.30

0.40

0.40

0.50

0.75

1.00
MHz

300 –

pF

– 4.0

pF

– 3.5

ns

–
–

50
50

ns

–
–

T

–
–

85
85

pC

80

125

Emitter

.230 (5.84) Dia Max

.195 (4.95) Dia Max

.210

(5.33)

Max

.500

(12.7)

Min

.018 (0.45)

Base
Collector

45°

.041 (1.05)