NTE NTE124 Datasheet
NTE124
Silicon NPN Transistor
High Voltage Power Output
Description:
The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,
inverters, deflection stages, and high fidelity amplifiers.
Features:
Collector–Emitter Sustaining Voltage: V
DC Current Gain: h
Current–Gain – Bandwidth Product: f
I
Rated to 2A
S/b
= 40 – 200 @ IC = 100mA
FE
T
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CBO
EBO
Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= 25°C), P
C
D
Derate Above 25°C 0.133W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
Storage Temperature Range, T
J
stg
Thermal Resistance, Junction–to–Case, R
CEO(sus)
= 10MHz (Min) @ IC = 100mA
thJC
= 300V @ IC = 5mA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
325V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Charactersitics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
CEO(sus)IC
Collector–Emitter Cutoff Current I
Collector–Base Cutoff Current I
Collector Cutoff Current I
Emitter–Base Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter “ON” Voltage V
CE(sat)IC
BE(on)IC
Small–Signal Characteristics
Current–Gain – Bandwidth Product f
Output Capacitance C
Small–Signal Current Gain h
CEO
CBO
CEV
EBO
FE
T
ob
fe
= 5mA, IB = 0, Note 1 300 – – V
VCE = 200V, IB = 0 – – 0.25 mA
VCB = 325V, IE = 0 – – 0.1 mA
VCE = 300V, V
VCE = 200V, V
= +100°C
T
C
= 1.5V – – 0.5 mA
EB(off)
EB(off)
= 1.5V,
– – 1.0 mA
VEB = 6V – – 0.1 mA
IC = 50mA, VCE = 10V 30 – –
IC = 100mA, VCE = 10V 40 – 200
IC = 250mA, VCE = 10V 25 – –
= 250mA, IB = 25mA – – 2.5 V
= 100mA, VCE = 10V – – 1.0 V
IC = 100mA, VCE = 10V,
10 – – MHz
f = 10MHz, Note 2
VCB = 100V, IE = 0, f = 100kHz – – 20 pF
IC = 100mA, VCE = 20V, f = 1kHz 35 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f
= |hfe| frequency
T
.062 (1.57)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.031 (0.78) Dia
.580 (14.7)
.485 (12.3)
Dia
.360 (9.14)
Min
.960 (24.3) Base
.295 (7.5)
.200
(5.08)
EmitterCollector/Case
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