NTE NTE123AP Datasheet
NTE123AP
Silicon NPN Transistor
Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
CEO
CB
EB
= 25°C), P
A
= 25°C), P
C
C
stg
D
D
J
θ
JC
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
θ
JA
357°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Base Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CEV
BEV
FE
= 1mA, IB = 0, Note 1 40 – – V
= 0.1mA, IE = 0 60 – – V
= 0.1mA, IC = 0 6 – – V
VCE = 35V, V
VCE = 35V, V
VCE = 1V, IC = 0.1mA 20 – –
VCE = 1V, IC = 1mA 40 – –
VCE = 1V, IC = 10mA 80 – –
VCE = 1V, IC = 150mA 100 – 300
VCE = 1V, IC = 500mA 40 – –
= 0.4V – – 0.1 µA
EB(off)
= 0.4V – – 0.1 µA
EB(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1) (Cont’d)
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Collector–Base Capacitance C
Emitter–Base Capacitance C
Input Impedance h
Voltage Feedback Ratio h
Small–Signal Current Gain h
Output Admittance h
Switching Characteristics
Delay Time t
Rise Time t
Storage Time t
Fall Time t
= 150mA, IB = 15mA – – 0.4 V
IC = 500mA, IB = 50mA – – 0.75 V
= 150mA, IB = 15mA 0.75 – 0.95 V
IC = 500mA, IB = 50mA – – 1.2 V
IC = 20mA, VCE = 10V, f = 100MHz 250 – – MHz
T
VCB = 5V, IE = 0, f = 100kHz – – 6.5 pF
cb
VCB = 0.5V, IC = 0, f = 100kHz – – 30 pF
eb
IC = 1mA, VCE = 10V, f = 1kHz 1.0 – 15 kΩ
ie
IC = 1mA, VCE = 10V, f = 1kHz 0.1 – 8.0 x 10
re
IC = 1mA, VCE = 10V, f = 1kHz 40 – 500
fe
IC = 1mA, VCE = 10V, f = 1kHz 1.0 – 30 µmhos
oe
VCC = 30V, V
d
IC = 150mA, IB1 = 15mA
r
VCC = 30V, IC = 150mA,
s
IB1 = IB2 = 15mA
f
EB(off)
= 2V,
– – 15 ns
– – 20 ns
– – 225 ns
– – 30 ns
–6
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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