NTE NTE123A, NTE159M Datasheet

NTE123A (NPN) & NTE159M (PNP)

Silicon Complementary Transistors

General Purpose

Description:

The NTE123A (NPN) a nd N TE159M ( PNP) a re w idely used “Industry Standard” c omplementary t ransis­tors in a TO18 type c ase d esigned f or a pplications s uch a s m edium–speed s witching a nd a mplifiers f rom
audio to VHF frequencies.

Features:

D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: f

= 300MHz (Min) @ IC 20mA

T

Absolute Maximum Ratings

Collector–Emitter Voltage, V

:

CEO

NTE123A 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE159M 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Base Voltage, V

CBO

NTE123A 75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE159M 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, V

EBO

NTE123A 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE159M 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Collector Current, I

C

NTE123A 800mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE159M 600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), PD 0.4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

Derate Above +25°C 2.28mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

NTE123A 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above +25°C 6.85mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE159M 1.8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above +25°C 10.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T

stg

D

J

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = 25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

NTE123A

V

(BR)CEO

IC = 10mA, IB = 0

40 – – V

NTE159M 60 – – V

Collector–Base Breakdown Voltage

NTE123A

V

(BR)CBO

IC = 10µA, IE = 0

75 – – V

NTE159M 60 – – V

Emitter–Base Breakdown Voltage

NTE123A

V

(BR)EBO

IE = 10µA, IC = 0

6 – – V

NTE159M 5 – – V

Collector Cutoff Current

NTE123A

I

CEX

VCE = 60V, V

EB(off)

= 3V

–

–

10 nA

NTE159M VCE = 30V, VBE = 500mV – – 50 nA

Collector Cutoff Current

NTE123A

I

CBO

VCB = 60V, IE = 0

– – 0.01 µA

VCB = 60V, IE = 0, TA = +150°C – – 10 µA

NTE159M VCB = 50V, IE = 0 – – 0.01 µA

VCB = 50V, IE = 0, TA = +150°C – – 10 µA
Emitter Cutoff Current (NTE123A Only) I
Base Cutoff Current

EBO

I

BL

NTE123A

NTE159M VCE = 30V, V

VEB = 3V, IC = 0 – – 10 nA

VCE = 60V, V

= 3V

EB(off)

= 500mV – – 50 nA

EB(off)

– – 20 nA

ON Characteristics

DC Current Gain

NTE123A

h

FE

VCE = 10V IC = 0.1mA, Note 1

35 – –
IC = 1mA 50 – –
IC = 10mA, Note 1 75 – –
IC = 10mA, TA = –55°C 35 – –
IC = 150mA, Note 1 100 – 300

VCE = 1V, IC = 150mA, Note 1 50 – –
VCE = 10V IC = 500mA, Not e 1 40 – –

NTE159M IC = 0.1mA 75 – –

IC = 1mA 100 – –
IC = 10mA 100 – –
IC = 150mA, Note 1 100 – 300
IC = 500mA, Note 1 50 – –

Collector–Emitter Saturation Voltage

NTE123A

V

CE(sat)

IC = 150mA, IB = 15mA, Note 1

– – 0.3 V

IC = 500mA, IB = 50mA, Note 1 – – 1.0 V

NTE159M IC = 150mA, IB = 15mA, Note 1 – – 0.4 V

IC = 500mA, IB = 50mA, Note 1 – – 1.6 V

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.