NTE NTE123 Datasheet
General Purpose Audio Amplifier, Switch
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 5.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
CBO
EBO
= +25°C), P
A
NTE123
Silicon NPN Transistor
C
D
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
D
Derate Above 25°C 20mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Base Cuttoff Current I
stg
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
I
CEX
EBO
BL
3.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10mA, IB = 0 40 – – V
= 10µA, IE = 0 75 – – V
= 10µA, IC = 0 6 – – V
VCE = 60V, IE = 0 – – 0.01 µA
VCE = 60V, IE = 0, TA = +150°C – – 10 µA
VCE = 60V, V
VEB = 3V, IC = 0 – – 10 nA
VCE = 60V, V
= 3V – – 10 nA
EB(off)
= 3V – – 20 nA
EB(off)
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
Input Impedance h
Voltage Feedback Ratio h
FE
T
obo
ibo
ie
re
IC = 0.1mA, VCE = 10V 35 – –
IC = 1mA, VCE = 10V 50 – –
IC = 10mA, VCE = 10V 75 – –
IC = 10mA, VCE = 10V, TA = –55°C 35 – –
IC = 150mA, VCE = 10V 100 – 300
IC = 150mA, VCE = 1.0V 50 – –
IC = 500mA, VCE = 10V 40 – –
= 150mA, IB = 15mA – – 0.3 V
IC = 500mA, IB = 50mA – – 1.0 V
= 150mA, IB = 15mA 0.6 – 1.2 V
IC = 500mA, IB = 50mA – – 2.0 V
IC = 20mA, VCE = 20V,
300 – – MHz
f = 100MHz, Note 2
VCB = 10V, IE = 0, f = 100kHz – – 8 pF
VEB = 0.5V, IC = 0, f = 100kHz – – 25 pF
IC = 1mA, VCE = 10V, f = 1kHz 2.0 – 8.0
kΩ
IC = 10mA, VCE = 10V, f = 1kHz 0.25 – 1.25 kΩ
IC = 1mA, VCE = 10V, f = 1kHz – – 8 x 10
IC = 10mA, VCE = 10V, f = 1kHz – – 4 x 10
–4
–4
Small–Signal Current Gain h
fe
IC = 1mA, VCE = 10V, f = 1kHz 50 – 300
IC = 10mA, VCE = 10V, f = 1kHz 75 – 375
Output Admittance h
oe
IC = 1mA, VCE = 10V, f = 1kHz 5.0 – 35
IC = 10mA, VCE = 10V, f = 1kHz 25 – 200
Collector–Base Time Constant rb′C
IE = 20mA, VCB = 20V, f = 31.8MHz – – 150 ps
c
Noise Figure NF IC = 100µA, VCE = 10V,
= 1kΩ, f = 1kHz
R
S
Real Part of Common–Emitter
Re(hie) IC = 20mA, VCE = 20V, f = 300MHz – – 60 Ω
High Frequency Input Impedance
Switching Characteristics
Delay Time t
Rise Time t
Storage Time t
Fall Time t
Active Region Time Constant T
q
s
VCC = 30V, V
IC = 150mA, IB1 = 15mA
r
BE(off)
= 0.5V,
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
f
IC = 150mA, VCE = 30V – – 2.5 ns
A
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
µmhos
µmhos
– – 4 dB
– – 10 ns
– – 25 ns
– – 225 ns
– – 60 ns
Note 2. f
is defined as the frequency at which |hfe| extrapolates to unity.
T
Loading...