NTE NTE1177 Datasheet

NTE1177
Integrated Circuit
TV Luminance Processor
Description:
The NTE1177 is a monolithic silicon integrated circuit in a 14–Lead DIP type package that performs the luminance processing functions of amplification; contrast, brightness and peaking control; blank­ing; and black–level clamping.
Features:
Absolute Maximum Ratings;
DC Supply Current (Into Pin13, Note 1), V Device Dissipation (Up to TA = +55°C, Note 1), P
CC
D
Derate Above 55°C 7.9mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T Storage Temperature Range, T
stg
opr
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
59.5mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265°C. . . . . . . . . . . . . . . . .
Note 1. Although the NTE1177 is rated for maximum dissipation of 750mW, it is recommended that
the current into Pin13 be limited by external circuit resistance to 39mA for a typical voltage at Pin13 of 11.8V.
Electrical Characteristics:
Parameter Symbol
Static Characteristics (Bias Voltage = 6.1V)
Voltage at Pin13 V Quiescent Voltage V
Current Into Pin13
Pin13 Connected to +11V
(TA = +25°C unless otherwise specified)
Test Conditions
Switch Numbers
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11
Switch Positions
For Characteristic Measurements
13
V I
13
2 1 1 2 2 4 1 2 2 1 1 11.0 11.8 13.2 V 2 1 1 2 2 3 1 2 2 1 1 3.3 4.0 5.7 V
4
2 1 1 2 2 2 1 2 2 1 1 7.1 7.7 8.3 V
7
2 1 1 2 2 3 1 2 2 1 2 10 19 30 mA
Min Typ Max Unit
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Test Conditions
Switch Numbers
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11
Switch Positions
Parameter
Dynamic Characteristics (Bias Voltage = 5.8V)
Wide–Band Gain (Note 2) 1 1 1 2 1 2 1 1 1 2 1 6.0 8.3 11.0 dB Contrast Gain Reduction (Note 3) 1 1 1 2 1 2 1 1 2 2 1 27 30 dB Peaking Gain (Note 2) 1 1 2 2 1 2 1 1 1 2 1 15.0 18.4 22.0 dB Peaking Gain Reduction (Note 4) 1 1 2 2 1 2 1 1 1 2 1 16 18 dB Max. Intermodulation Distortion
2V (Note 5)
3V (Note 6) 1 1 1 1 2 2 1 2 1 40 %
1 1 1 1 2 2 1 2 1 20 %
For Characteristic Measurements
Min Typ Max Unit
Note 2. Set 50kH z g enerator f or 1 00mV
Adjust R1 Peaking C ontrol for minimum s etting. M easure
P–P
wide–band gain at Pin7.
Note 3. Set 50kHz generator for 100mV
. Adjust R1 for minimum setting. Measure contrast gain
P–P
reduction at Pin7.
Note 4. Set 50kHz generator for 100mV
. Adjust R1 for maximum setting. Measure peaking gain
P–P
reduction at Pin7.
Note 5. Adjust R1 for minimum setting. With S2 at switch position 1 and S7 at switch position 3, set
50kHz generator for 2V 100mV
. Then with S7 at switch position 2, measure downward modulation of the 1MHz
P–P
. Then with S2 at switch position 2, set 1MHz generator for
P–P
signal due to the 50kHz signal.
Note 6. Repeat step 5 except that the 50kHz generator must be set at 3V
14 8
Pin Connection Diagram
Video Input N.C.
Peaking Input Peaking Input
Substrate GND
Clamp Inhibit
Clamped Video Out
1 2
3 4 5 6 7
14
Shunt Regulator
13
and Bypass
12
Clamp Inhibit Input
11
Peaking ControlVideo Output Contrast Control
10
Blanking Input
9 8
Brightness Control
17
.785 (19.95)
Max
.100 (2.45)
.
P–P
.200 (5.08)
Max
.099 (2.5) Min
.300
(7.62)
.600 (15.24)
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