NTE NTE112 Datasheet
NTE112
Silicon Small Signal Schottky Diode
Description:
The NTE112 is a metal t o s ilicon junction d iode in a DO35 t ype package primarly intended f or U HF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V
Forward Continuous Current (T
Surge Non–Repetitive Forward Current (t
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient (Note 1), R
RRM
= +25°C, Note 1), I
A
≤ 1s, Note 1), I
p
J
stg
F
FSM
th (j–a)
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), T
Note 1. On infinite heatsink with 4mm lead length.
–65° to +150°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400°C/W. . . . . . . . . . . . . . . . . . . . . . . .
L
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA. . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+230°C. . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Breakdown Voltage V
Forward Voltage Drop V
Reverse Current I
Dynamic Characteristics
Capacitance C VR = 0V, f = 1MHz – – 1 pF
Stored Charge Q
Frequency F f = 1GHz, Note 4 – 6 7 dB
(TA = +25°C unless otherwise specified)
(BR)IR
F
R
S
= 100µA 5 – – V
IF = 10mA, Note 2 – – 0.55 V
VR = 1V, Note 2 – – 0.05 µA
IF = 10mA, Note 3 – – 3 pC
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle < 2%.
Note 3. Measured on a B–line Electronics QS–3 stored charge meter.
Note 4. Noise Figure Test: – Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.
1.000 (25.4) Min .200 (5.08) Max
.090 (2.28) Dia Max.022 (.509) Dia Max
Color Band Denotes Cathode
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