NTE NTE11, NTE12 Datasheet
NTE11 (NPN) & NTE12 (PNP)
Silicon Complementary Transistors
High Current Amplifier
Description:
The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.
Features:
D High Collector Current: IC = 5A Max
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings:
(TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
NTE11 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE12 27V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
NTE11 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE12 18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
D
750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current
NTE11
I
CBO
VCB = 10V, IE = 0 – – 0.1 µA
NTE12 VCB = 10V, IE = 0 – – 100 nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter Cutoff Current
NTE11
I
EBO
VEB = 7V, IC = 0 – – 0.1 µA
NTE12 VEB = 5V, IC = 0 – – 1.0 µA
Collector–Emitter Voltage
NTE11
V
CEO
IC = 1mA, IB = 0 20 – – V
NTE12 IC = 1mA, IB = 0 18 – – V
Emitter–Base Voltage V
EBOIE
= 10µA, IC = 0 7 – – V
DC Current Gain
NTE11
h
FE1
VCE = 2V, IC = 500mA, Note 1 340 – 600
NTE12 VCE = 2V, IC = 2A, Note 1 180 – 625
NTE11 Only h
FE2
VCE = 2V, IC = 2A, Note 1 150 – –
Collector–Emitter Saturation Voltage
NTE11
V
CE(sat)
IC = 3A, IB = 100mA, Note 1 – – 1 V
NTE12 IC = 3A, IB = 100mA, Note 1 – 0.4 1.0 V
Transition Frequency
NTE11
f
T
VCB = 6V, IE = 50mA, f = 200MHz – 150 – MHz
NTE12 VCB = 6V, IE = 50mA, f = 200MHz – 120 – MHz
Collector Output Capacitance
NTE11
C
ob
VCB = 20V, IE = 0, f = 1MHz – – 50 pF
NTE12 VCB = 20V, IE = 0, f = 1MHz – 60 – pF
Note 1. Pulse measurement
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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