NTE NTE108 Datasheet

NTE108

Silicon NPN Transistor

High Frequency Amplifier

Description:

The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency
amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise
and fall times less than 2.5ns.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I

CEO

CBO

EBO

C

Total Device Dissipation (TA = +25°C), P

Derate Above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient (Note 1), R

Note 1. R

Electrical Characteristics:

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

is measured with the device soldered into a typical printed circuit board.

Θ

JA

(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

J

thJC

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

VCB = 15V, IE = 0 – – 10 nA

thJA

= 3mA, IB = 0, Note 2 15 – – V
= 1µA, IE = 0 30 – – V
= 10µA, IC = 0 3 – – V

Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C/W. . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

IC = 3mA, VCE = 1V, Note 2 20 – –

IC = 8mA, VCE = 10V, Note 2 20 – 200
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

= 10mA, IB = 1mA – – 0.4 V
= 10mA, IB = 1mA – – 1.0 V

Small–Signal Characteristics

Current Gain–Bandwidth Product f

T

IC = 4mA, VCE = 10V,

f = 100MHz, Note 2
Output Capacitance C

obo

VCB = 0V, IE = 0, f = 140kHz – – 3.0 pF

VCB = 10V, IE = 0, f = 140kHz – – 1.7 pF
Input Capacitance C

ibo

VEB = 0.5V, IC = 0, f = 140kHz – – 2.0 pF
Noise Figure NF IC = 1mA, VCE = 6V,

= 400Ω, f = 60MHz

R

S

Functional Test

Common–Emitter Amplifier Power
Gain

Power Output P

G

pe

out

IC = 6mA, VCB = 12V,

f = 200MHz (G

+ Gre < –20dB)

fd

IC = 8mA, VCB = 15V,

f = 500MHz
Oscillator Collector Efficiency η IC = 8mA, VCB = 15V,

= 30mW, f = 500MHz

P

out

600 – – MHz

– – 6 dB

15 – – dB

30 – – mW

25 – – %

Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.

.135 (3.45) Min

.210

(5.33)

Max

.500

(12.7)

Min

E B C

.100 (2.54)

.050 (1.27)

.165
(4.2)
Max

.105 (2.67) Max

.105 (2.67) Max

.205 (5.2) Max

Seating Plane

.021 (.445) Dia Max