NTE NTE107 Datasheet

NTE107

Silicon NPN Transistor

UHF Oscillator for Tuner

Description:

The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is s uitable for use as an oscillator in UHF t elevision tuners.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

Total Power Dissipation (T

(TA = +25°C unless otherwise specified)

CBO

CEO

= +25°C), P

A

T

Derate above +25°C 2.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Lead temperature (During Soldering, 1/16” ±1/32” from case, 10sec), T

(T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Forward Current Transfer Ratio h
Collector Saturation Voltage V

= +25°C unless otherwise specified)

A

(BR)CBOIC
(BR)CEOICEO
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

= 100µA 30 – – V

= 3mA, Note 1 12 – – V

= 100µA 3 – – V
VCB = 15V, IE = 0 – – 0.5 µA
VEB = 2V, IC = 0 – – 0.5 µA
VCE = 10V, IC = 8mA 20 75 –

= 10mA, IB = 1mA – – 0.6 V

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . . . . . . . . .

Note 1. Pulse test: Pulse Width = 1µs, Duty Cycle = 1%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Noise Figure NF IC = 1mA, VCB = 6V, f = 60MHz,

T
ob

IC = 5mA, VCE = 10V, f = 100MHz 700 – 2100 MHz
VCE = 10V, IE = 0, f = 1MHz 0.8 – 1.5 pF

R

= 400Ω

G

.135 (3.45) Min

.210

(5.33)

Max

.500

Seating Plane

.021 (.445) Dia Max

(12.7)

Min

– 4.0 6.5 dB

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

E C B

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max