NTE NTE106 Datasheet

Silicon PNP Transistor

Switching Transistor

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

Derate Above 25°C 2.06mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

Derate Above 25°C 6.9mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

CEO

CBO

EBO

C

= +25°C), P

A

= +25°C), P

C

stg

D

D

NTE106

J

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.36W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Base Current I

ON Characteristics

DC Current Gain h

(TA = +25°C unless otherwise specified)

(BR)CEOIC

V

(BR)CESIC
(BR)CBOIC
(BR)EBOIE

CES

B

FE

= 3mA, IB = 0, Note 1 15 – – V
= 100µA, VBE = 0 15 – – V
= 100µA, IE = 0 15 – – V

= 100µA, IC = 0 4.5 5.9 – V
VCE = 8V, VBE = 0 – – 10 nA
VCE = 8V, VBE = 0, TA = +125°C – – 5 µA
VCE = 8V, VBE = 0 – – 1 nA

IC = 1mA, VCE = 500mV 35 – –
IC = 10mA, VCE = 300mV 50 – 120
IC = 10mA, VCE = 300mV, TA = –55°C 20 – –
IC = 50mA, VCE = 1V, Note 1 40 – –

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Cont’d)

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C

Switching Characteristics

Turn–On Time t
Delay Time t
Rise Time t
Turn–Off Time t
Stoirage Time t
Fall Time t
Storage Time t

T

obo

ibo

on

d

r

off

s

f

s

= 1mA, IB = 0.1mA – – 0.15 V
IC = 10mA, IB = 1mA – – 0.18 V
IC = 50mA, IB = 5mA, Note 1 – – 0.6 V

= 1mA, IB = 0.1mA – 0.7 0.8 V
IC = 10mA, IB = 1mA 0.75 0.86 0.90 V
IC = 50mA, IB = 5mA, Note 1 – 1.1 1.5 V

IC = 10mA, VCE = 10V, f = 100MHz 850 1100 – MHz
VCB = 5V, IE = 0, f = 140kHz – 2.0 3.0 pF
VBE = 500mV, IC = 0, f = 140kHz – 2.0 3.5 pF

VCC = 1.5V, VBE = 0, IC = 10mA,
IB1 = 1mA

– 10 15 ns
– 5 10 ns
– 5 15 ns

VCC = 1.5V, IC = 10mA,
IB1 = IB2 = 1mA

– 16 20 ns
– 17 20 ns
– 8 10 ns

IC = 10mA, IB1 = 10mA, IB2 = 10mA – – 20 ns

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

.230 (5.84) Dia Max

.195 (4.95) Dia Max

.210 (5.33)

Max

.500

(12.7)

Min

Emitter

45°

.030 (.762) Max

.018 (0.45)

Base
Collector

.041 (1.05)