NTE NTE106 Datasheet
Silicon PNP Transistor
Switching Transistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 2.06mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 6.9mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
CEO
CBO
EBO
C
= +25°C), P
A
= +25°C), P
C
stg
D
D
NTE106
J
15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.36W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Base Current I
ON Characteristics
DC Current Gain h
(TA = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)CBOIC
(BR)EBOIE
CES
B
FE
= 3mA, IB = 0, Note 1 15 – – V
= 100µA, VBE = 0 15 – – V
= 100µA, IE = 0 15 – – V
= 100µA, IC = 0 4.5 5.9 – V
VCE = 8V, VBE = 0 – – 10 nA
VCE = 8V, VBE = 0, TA = +125°C – – 5 µA
VCE = 8V, VBE = 0 – – 1 nA
IC = 1mA, VCE = 500mV 35 – –
IC = 10mA, VCE = 300mV 50 – 120
IC = 10mA, VCE = 300mV, TA = –55°C 20 – –
IC = 50mA, VCE = 1V, Note 1 40 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d)
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
Switching Characteristics
Turn–On Time t
Delay Time t
Rise Time t
Turn–Off Time t
Stoirage Time t
Fall Time t
Storage Time t
T
obo
ibo
on
d
r
off
s
f
s
= 1mA, IB = 0.1mA – – 0.15 V
IC = 10mA, IB = 1mA – – 0.18 V
IC = 50mA, IB = 5mA, Note 1 – – 0.6 V
= 1mA, IB = 0.1mA – 0.7 0.8 V
IC = 10mA, IB = 1mA 0.75 0.86 0.90 V
IC = 50mA, IB = 5mA, Note 1 – 1.1 1.5 V
IC = 10mA, VCE = 10V, f = 100MHz 850 1100 – MHz
VCB = 5V, IE = 0, f = 140kHz – 2.0 3.0 pF
VBE = 500mV, IC = 0, f = 140kHz – 2.0 3.5 pF
VCC = 1.5V, VBE = 0, IC = 10mA,
IB1 = 1mA
– 10 15 ns
– 5 10 ns
– 5 15 ns
VCC = 1.5V, IC = 10mA,
IB1 = IB2 = 1mA
– 16 20 ns
– 17 20 ns
– 8 10 ns
IC = 10mA, IB1 = 10mA, IB2 = 10mA – – 20 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.500
(12.7)
Min
Emitter
45°
.030 (.762) Max
.018 (0.45)
Base
Collector
.041 (1.05)
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