NTE NTE105 Datasheet

NTE105

Germanium PNP Transistor

Audio Power Amp

Description:

The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power
switching and amplifier applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Base Current, I
Continuous Emitter Current, I
Total Device Dissipation (T

CES

CB

EB

B

E

= +25°C), P

C

D

Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R

J
thJC

–65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

Floating Potential V
Collector Cutoff Current I

Emitter Cutoff Current I

ON Characteristics

DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V

(TC = +25°C unless otherwise specified)

(BR)CEOIC

V

(BR)CESIC

EBF

CBO

EBO

FE

CE(sat)IC

BE

= 1A, IB = 0, Note 1 25 – – V

= 300mA, VBE = 0, Note 1 40 – – V
VCB = 40V, IE = 0 – – 1.0 V
VCB = 2V, IE = 0 – 0.1 – mA
VCB = 40V, IE = 0 – 2.0 8.0 mA
VCB = 40V, IE = 0, TB = +71°C – – 15 mA
VBE = 20V, IC = 0 – 1.0 8.0 mA

VCE = 2V, IC = 5A 20 – 40
VCE = 2V, IC = 12A – 20 –

= 12A, IB = 2A – 0.3 – V
VCE = 2V, IC = 5A – 0.65 – V

Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Common–Emitter Cutoff Frequency fαe VCE = 6V, IC = 5A – 10 – kHz

Switching Characteristics

Rise Time t
Fall Time t

.520 (13.2)

Max

.710

(18.03)

Max

VCE = 12V, IC = 12A, IB = 2A – 15 – µs

r

VBE = 6V, IC = 0, RBE = 10Ω – 15 – µs

f

1.250 (31.75
Dia Max

1.005 (25.55)
Dia Max

.500

(12.7)

Max

.312 (7.93)

10–32 UNF–2A

Emitter

Base

.190 (4.83)

.345 (8.76)

Collector/Case